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    FF300R17ME7-B11

    1700 V, 300 A dual IGBT module EconoDUAL™ 3 1700 V, 300 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology .
    Producent:
    Infineon
    Rozmiar:
    1412 kB
    Stron:
    17
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    FF3MR12KM1H-S

    62mm CoolSiC™ MOSFET half bridge module 1200 V in common source topology 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 3 mOhm RDS(on) in the well known 62mm housing combined with M1H chip technology. Now also available with common source configuration
    Producent:
    Infineon
    Rozmiar:
    887 kB
    Stron:
    18
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    FF3MR20W3M1H-H11

    EasyPACK™ 3B CoolSiC™ MOSFET 2000 V half-bridge module, integrated NTC temperature sensor and High Current Pin.
    Producent:
    Infineon
    Rozmiar:
    818 kB
    Stron:
    18
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    FF3MR20KM1H-S

    CoolSiC™ MOSFET half bridge module 2000 V
    Producent:
    Infineon
    Rozmiar:
    727 kB
    Stron:
    15
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    FF3MR12KM1HP

    CoolSiC™ MOSFET half bridge module 1200 V 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.9 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    708 kB
    Stron:
    16
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    FF3MR12KM1H

    CoolSiC™ MOSFET half bridge module 1200 V 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.9 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM)
    Producent:
    Infineon
    Rozmiar:
    704 kB
    Stron:
    16
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    FF33MR12W1M1H-B11

    Half-bridge 1200 V module with CoolSiC™ MOSFET EasyDUAL™ 1B 1200 V, 33 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology
    Producent:
    Infineon
    Rozmiar:
    675 kB
    Stron:
    16
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    FF33MR12W1M1HP-B11

    Half-bridge 1200 V module with CoolSiC™ MOSFET EasyDUAL™ 1B 1200 V, 33 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology
    Producent:
    Infineon
    Rozmiar:
    672 kB
    Stron:
    16
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    FF3MR20KM1HP

    CoolSiC™ MOSFET half bridge module 2000 V 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    649 kB
    Stron:
    15
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    FF300R12W2T7E-B11

    1200 V, 300 A common emitter IGBT module EasyDUAL™ 2B, 1200 V, 300 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC.
    Producent:
    Infineon
    Rozmiar:
    641 kB
    Stron:
    16
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    FF3MR20KM1H

    CoolSiC™ MOSFET half bridge module 2000 V 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    433 kB
    Stron:
    15
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    FF300R12KE3HOSA1

    Tranzysor IGBT Infineon Technologies FF300R12KE3HOSA1 N/A N/A
    Producent:
    Infineon Technologies
    Rozmiar:
    414 kB
    Stron:
    8