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    ADAU1463

    Sigma DSP, Digital Audio Processor with Increased IS Flexibility
    Producent:
    Analog Devices
    Rozmiar:
    6158 kB
    Stron:
    207
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    TLE9166EQ

    MOTIX™ TLE9166EQ: a powerful, versatile multi half-bridge IC for door control modules and zone controllers, offering top performance and flexibility. MOTIX™ TLE9166EQ multi half-bridge IC is perfectly suited for door lock, safe lock, mirror fold and adjustment functionalities, offering precise and accurate motor control for optimized performance. MOTIX™ TLE9166EQ offers a compact solution with small package and inrush current (IC) management for DC motors, incandescent bulbs and LEDs, ensuring seamless int
    Producent:
    Infineon
    Rozmiar:
    1800 kB
    Stron:
    70
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    AIMBG75R007M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 7 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1614 kB
    Stron:
    18
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    AIMBG75R025M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 25 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1609 kB
    Stron:
    18
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    IMBG75R007M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    18
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    IMBG75R025M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1418 kB
    Stron:
    18
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    2EDL5023U2D

    120V HB 2EDL50X3U2D EiceDRIVER™ Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.
    Producent:
    Infineon
    Rozmiar:
    1404 kB
    Stron:
    30
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    AIMBG75R060M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 60 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1388 kB
    Stron:
    18
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    AIMBG75R033M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 33 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1384 kB
    Stron:
    18
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    AIMBG75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 50 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1383 kB
    Stron:
    18
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    AIMBG75R040M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 40 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1381 kB
    Stron:
    18
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    IMCQ120R053M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1334 kB
    Stron:
    18
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    IMCQ120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1331 kB
    Stron:
    18
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    IMCQ120R017M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1327 kB
    Stron:
    18
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    IMCQ120R040M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1317 kB
    Stron:
    18
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    IMCQ120R005M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 5 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1310 kB
    Stron:
    18
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    IMCQ120R004M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1305 kB
    Stron:
    18
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    IMCQ120R026M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
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    IMCQ120R078M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1295 kB
    Stron:
    18
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    IMCQ120R010M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1292 kB
    Stron:
    17
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    IMCQ120R007M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1243 kB
    Stron:
    17
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    IMBG75R060M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    18
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    IMBG75R033M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    18
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    IMBG75R050M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    18
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    IMBG75R040M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
    18