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    ISC008N06LM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
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    Infineon
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    1547 kB
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    14
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    ISC025N06LM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
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    Infineon
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    1491 kB
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    13
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    MIC3001

    MIC3001 - FOM Management IC with Internal Calibration
    Producent:
    Microchip
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    1343 kB
    Stron:
    76
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    ISC060N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
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    Infineon
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    1270 kB
    Stron:
    15
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    ISZ025N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
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    Infineon
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    1268 kB
    Stron:
    13
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    ISZ072N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
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    Infineon
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    1267 kB
    Stron:
    13
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    ISZ023N06LM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1261 kB
    Stron:
    11
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    IQE018N06NM6SC

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1256 kB
    Stron:
    15
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    IACN04G2L56X032

    40 V、N 通道、最大 3.2 mΩ、汽车 MOSFET、SSO8 (5x6) 推出适用于坚固汽车应用的 5x6mm² SSO8 无引线封装的 40V MOS 技术。该产品组合包含 16 种产品（最大 RDS(on) 从 0.8mΩ 至 4.4mΩ），非常适合低功率和高功率需求。该封装提供一流的 FOM（RDS(on) x Qg）和 120A 连续电流额定值，比标准 DPAK 高出 25% 以上，同时还具有卓越的开关性能和 EMI 行为（与传统封装相比电感降低约 4 倍）。
    Producent:
    Infineon
    Rozmiar:
    1241 kB
    Stron:
    12
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    IACN04G2N56X036

    40 V、N 通道、最大 3.6 mΩ、汽车 MOSFET、SSO8 (5x6) 推出适用于坚固汽车应用的 5x6mm² SSO8 无引线封装的 40V MOS 技术。该产品组合包含 16 种产品（最大 RDS(on) 从 0.8mΩ 至 4.4mΩ），非常适合低功率和高功率需求。该封装提供一流的 FOM（RDS(on) x Qg）和 120A 连续电流额定值，比标准 DPAK 高出 25% 以上，同时还具有卓越的开关性能和 EMI 行为（与传统封装相比电感降低约 4 倍）。
    Producent:
    Infineon
    Rozmiar:
    1240 kB
    Stron:
    12
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    IACN04G2L56X039

    40 V、N 通道、3.9 mΩ（最大值）、汽车 MOSFET、SSO8（5x6 推出适用于坚固汽车应用的 5x6mm² SSO8 无引线封装的40V MOS 技术。该产品组合包含 16 种产品（最大 RDS(on) 从 0.8mΩ 至 4.4mΩ），非常适合低功率和高功率需求。该封装提供一流的 FOM（RDS(on) x Qg）和 120A 连续电流额定值，比标准 DPAK 高出 25% 以上，同时还具有卓越的开关性能和 EMI 行为（与传统封装相比电感降低约 4 倍）。
    Producent:
    Infineon
    Rozmiar:
    1231 kB
    Stron:
    12
  12. Podgląd PDFa
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    ISC009N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1223 kB
    Stron:
    15
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    IQE018N06NM6CGSC

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on) in SuperSO8. These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1131 kB
    Stron:
    15
  14. Podgląd PDFa
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    IQE018N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1104 kB
    Stron:
    15
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    ISC018N08NM6SC

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!
    Producent:
    Infineon
    Rozmiar:
    1098 kB
    Stron:
    15
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    ISC031N08NM6SC

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!
    Producent:
    Infineon
    Rozmiar:
    1096 kB
    Stron:
    15
  17. Podgląd PDFa
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    ISC007N06NM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1096 kB
    Stron:
    15
  18. Podgląd PDFa
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    ISC009N06NM6SC

    OptiMOS™ 6 n-channel power MOSFET 60 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~32% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1096 kB
    Stron:
    15
  19. Podgląd PDFa
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    ISC007N06LM6

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    1094 kB
    Stron:
    15
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    IQEH84NE2LM7UCG

    OptiMOS™ 7 25 V switching optimized power MOSFETs for hard- and soft-switching topologies in PQFN 3.3x3.3 Source-Down package The OptiMOS™ 7 25 V offers a new level of application-optimization, enabling peak performance for data centers, servers, AI more. The portfolio is available in two technology flavors, including products optimized for hard-switching as well as for soft-switching topologies. Hard-switching optimized products come with an excellent Miller ratio, FOMs and RDS(on)10, while products optim
    Producent:
    Infineon
    Rozmiar:
    923 kB
    Stron:
    13
  21. Podgląd PDFa
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    IQE018N06NM6CG

    OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.
    Producent:
    Infineon
    Rozmiar:
    921 kB
    Stron:
    12
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    IPB023N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 2.3 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB023N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    882 kB
    Stron:
    12
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    IPB018N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 1.8 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB018N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    881 kB
    Stron:
    12
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    IPB020N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in D²PAK Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a RDS(on) of 2.0 mOhm in a D²PAK package. This product addresses a broad range of applications from low- to high-switching frequency. Compared to the previous technology, the IPB020N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
    Producent:
    Infineon
    Rozmiar:
    880 kB
    Stron:
    12