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    STGAP1AS

    Automotive galvanically isolated single gate driver
    Producent:
    STMicroelectronics
    Rozmiar:
    2502 kB
    Stron:
    70
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    1EDI3050AS

    The EiceDRIVER™ 1EDI3050AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT and SiC power technologies. The EiceDRIVER™ 1EDI3051AS is galvanically isolated using Infineon’s coreless transformer technology. Comprehensive safety features and ISO 26262-compliance enable system level ASIL D classification, while accompanying safety documents ease FMEDA analysis. Full configurability via SPI enables platform development. The integrated high accuracy flyback controller can op
    Producent:
    Infineon
    Rozmiar:
    1739 kB
    Stron:
    150
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    1EDI3051AS

    The EiceDRIVER™ 1EDI3051AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT and SiC power technologies. The EiceDRIVER™1EDI3051AS uses robust Infineon Coreless Transformer Technology to provide bi-directional signal transfer across the galvanic isolation barrier. Comprehensive safety features and ISO 26262-compliance enable ASIL D classification on system level. Accompanying safety documents ease and speed-up FMEDA analysis in the application.
    Producent:
    Infineon
    Rozmiar:
    1730 kB
    Stron:
    148
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    IPDQ60R022S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1287 kB
    Stron:
    14
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    IPDQ60R040S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1281 kB
    Stron:
    14
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    ISSI30R11H

    Coreless-transformer advanced solid-state isolator This solid-state isolator provides powerful energy transmission over a galvanic isolation barrier. No dedicated voltage supply required on the output stage. Input to output buffered drive enables fast turn-on/off for safe switches SOA operation. This device features miller clamping, over-current and over-temperature protections, reading an external PTC sensor, to easily and safely build protected solid-state relays.
    Producent:
    Infineon
    Rozmiar:
    1278 kB
    Stron:
    37
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    IPDQ60R065S7

    Low RDS(on) 600V SJ MOSFET in the efficient top-side- cooled QDPAK, ideal for low-frequency switching applications & solid-state solutions The S7 series is an ideal fit for applications where MOSFETs are switched at low frequency, such as active-bridge rectification, inverter stages, in-rush relays, PLCs, power-solid-state relays and circuit breakers. For these designs, the S7 MOSFETs are complemented by the rest of the CoolMOS™ family, low-voltage OptiMOS™ and medium-voltage MOSFETs, galvanically isol
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    14
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    1EDI3025AS

    The EiceDRIVER™ 1EDI3025AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3025AS is a high-voltage IGBT driver designed for automotive applications, with 8 kV galvanic insulation using coreless transformer (CT) technology. It features a powerful output stage of up to 20 A peak current for high power switches. It has a split output stage enabling different slew rates for switching on and off via separate gate resistors and
    Producent:
    Infineon
    Rozmiar:
    1215 kB
    Stron:
    76
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    1EDI3035AS

    The EiceDRIVER™ 1EDI3035AS is an automotive qualified single-channel high-voltage gate driver optimized for SiC MOSFET. The EiceDRIVER™ gate driver 1EDI3035AS is a high-voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    76
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    1EDI3026AS

    The EiceDRIVER™ 1EDI3026AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3026AS is a high-voltage IGBT driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage with up to 20 A peak current for high power switches. It features a split output stage for different slew rates during switching on and off, achieved by separate gate resist
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
    76
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    1EDI3028AS

    The EiceDRIVER™ 1EDI3028AS is an automotive qualified single-channel high-voltage driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3028AS is a high-voltage IGBT driver for automotive applications, providing 8 kV galvanic insulation with coreless transformer (CT) technology. It offers a powerful output stage with up to 15 A peak current for high power switches. It features a split output stage for different slew rates during switching on and off, achieved by separate gate resistors, a
    Producent:
    Infineon
    Rozmiar:
    1167 kB
    Stron:
    72
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    1EDI3038AS

    The EiceDRIVER™ 1EDI3038AS is an automotive qualified single-channel high-voltage gate driver optimized for SiC MOSFET. The EiceDRIVER™ gate driver 1EDI3038AS is a high-voltage SiC MOSFET driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage with up to 15 A peak current for high power switches and includes a split output stage enabling different slew rates for switching on and off. The DESAT protection and config
    Producent:
    Infineon
    Rozmiar:
    1146 kB
    Stron:
    70
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    1ED3330MC12M

    5.7kV (rms) single-channel galvanic isolated gate driver IC with DESAT, active Miller clamp driver, Soft-off, UVLO, and shutdown with fault EiceDRIVER™ Enhanced 5.7 kV single-channel isolated gate driver IC with ±12 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) ideal for SiC MOSFETs. The gate driver IC also includes integrated protection features such as DESAT protection, active Miller clamp driver, and a
    Producent:
    Infineon
    Rozmiar:
    588 kB
    Stron:
    27
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    NCV57001FDWR2G

    Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation
    Producent:
    onsemi
    Rozmiar:
    528 kB
    Stron:
    19
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    NCV57000

    SiC/MOSFET/IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation
    Producent:
    onsemi
    Rozmiar:
    502 kB
    Stron:
    22
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    NCD57000

    Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.
    Producent:
    onsemi
    Rozmiar:
    502 kB
    Stron:
    22
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    NCD57001

    Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation
    Producent:
    onsemi
    Rozmiar:
    501 kB
    Stron:
    22
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    NCV57001

    SiC/MOSFET/IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation
    Producent:
    onsemi
    Rozmiar:
    501 kB
    Stron:
    22
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    TJF1052I

    Galvanically isolated high-speed CAN transceiver
    Producent:
    NXP
    Rozmiar:
    468 kB
    Stron:
    1
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    TJA1052I

    Galvanically isolated high-speed CAN transceiver
    Producent:
    NXP
    Rozmiar:
    377 kB
    Stron:
    1
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    TJF1052IT

    Galvanically isolated high-speed CAN transceiver
    Producent:
    NXP
    Rozmiar:
    300 kB
    Stron:
    27
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    STEVAL-IFP033V1

    Galvanically-isolated 8 channel high-side driver based on the ISO8200BQ
    Producent:
    STMicroelectronics
    Rozmiar:
    273 kB
    Stron:
    4
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    1572Z05-003.106

    Potentiometer 345° movement x 4-20mA - PW620/MU-i01 1572Z05-003.106 (PW620/MU-i01) Precision Potentiometer - PW620/MU-i01. Casing: model 20 with limit stops Active range: 0 - 345° Output: 4 - 20 mA at max. 600 Ohms preset at 0 - 345° Supply: 20-30 VDC with galvanic isolation between supply and output terminals. Shaft # 1570z02-000:22A torque 3 10 cmp and 3 0,1 Ncm respectively Customs tariff code: 85 33 31 00 Manufacturers part number is PW620/MU-i01 - 1572Z05-003.106 (PW-620-MU-i01 - 1572Z05003106) Custom
    Producent:
    Meditronik
    Rozmiar:
    190 kB
    Stron:
    1