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    IAUZN08S7N046

    80 V, N-Ch, 4.6 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN08S7N046 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicatio
    Producent:
    Infineon
    Rozmiar:
    2325 kB
    Stron:
    12
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    IAUZN10S7N078

    100 V, N-Ch, 7.8 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN10S7N078 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicat
    Producent:
    Infineon
    Rozmiar:
    2302 kB
    Stron:
    12
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    IAUZN08S7L177

    80 V, N-Ch, 17.7 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN08S7L177 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicati
    Producent:
    Infineon
    Rozmiar:
    2270 kB
    Stron:
    12
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    IAUZN10S7L289

    100 V, N-Ch, 28.9 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN10S7L289 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applica
    Producent:
    Infineon
    Rozmiar:
    2266 kB
    Stron:
    12
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    IPTG054N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG054N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
    Producent:
    Infineon
    Rozmiar:
    1624 kB
    Stron:
    13
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    IPTG063N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG063N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
    Producent:
    Infineon
    Rozmiar:
    1601 kB
    Stron:
    13
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    IPTG044N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG044N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
    Producent:
    Infineon
    Rozmiar:
    1589 kB
    Stron:
    13
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    IPTG039N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG039N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
    Producent:
    Infineon
    Rozmiar:
    1240 kB
    Stron:
    13
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    IPM018N10NM5LF2

    OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C. This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type. The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection appl
    Producent:
    Infineon
    Rozmiar:
    1120 kB
    Stron:
    15
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    VLRE31R1S2

    Reverse Gullwing SMD LED Yellow
    Producent:
    Vishay
    Rozmiar:
    250 kB
    Stron:
    8
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    VLRK31R1S2

    Reverse Gullwing SMD LED Red
    Producent:
    Vishay
    Rozmiar:
    244 kB
    Stron:
    8
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    VLRYG31...

    Reverse Gullwing SMD LED Yellow
    Producent:
    Vishay
    Rozmiar:
    242 kB
    Stron:
    8