IGLD60R190D1S

CoolGaN™ 600 V enhancement mode power transistor with fast turn-on and turn-off speed and minimum switching losses The IGLD60R190D1S enables more compact topologies at higher efficiency and higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in contemporary USB-C adapters and chargers.