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    IHW30N110R5

    1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package Reverse Conducting R5 1100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    15