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    IMZA65R040M2H

    CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package The CoolSiC™ MOSFET 650 V, 40 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1815 kB
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    IMZA120R040M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1606 kB
    Stron:
    18
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    IMZA120R017M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1575 kB
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    18
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    IMZA120R022M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 22 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1561 kB
    Stron:
    18
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    IMZA120R078M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
    Rozmiar:
    1558 kB
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    18
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    IMZA120R026M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1554 kB
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    18
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    IMZA120R053M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1554 kB
    Stron:
    18
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    IMZA120R012M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1552 kB
    Stron:
    18
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    IMZA75R016M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1534 kB
    Stron:
    15
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    IMZA75R020M1H

    The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1527 kB
    Stron:
    15
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    IMZA65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1520 kB
    Stron:
    16
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    IMZA75R027M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1518 kB
    Stron:
    15
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    IMZA75R060M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1511 kB
    Stron:
    15
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    IMZA65R020M2H

    CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a TO-247-4 package The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1510 kB
    Stron:
    16
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    IMZA75R040M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    1483 kB
    Stron:
    15
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    IMZA120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO247-4 package CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1477 kB
    Stron:
    18
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    IMZA65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TO247-4L, 50 mΩ The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1457 kB
    Stron:
    16
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    IMZA65R007M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a TO-247-4 pin package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
    Producent:
    Infineon
    Rozmiar:
    1447 kB
    Stron:
    16
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    IMZA40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
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    IMZA40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
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    IMZA40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    17
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    IMZA40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    17
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    IMZA40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    17
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    IMZA75R008M1H

    The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
    Producent:
    Infineon
    Rozmiar:
    996 kB
    Stron:
    16
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17