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IPT60R099CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1540 kB
Stron:: 16

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IPT60R120CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1538 kB
Stron:: 16

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IPT60R160CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1537 kB
Stron:: 16

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IPT60R024CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1348 kB
Stron:: 16

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IPT60R070CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1347 kB
Stron:: 16

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IPT60R055CM8

600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7. It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1347 kB
Stron:: 16

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IPT65R018CM8

650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.

Producent:: Infineon
Rozmiar:: 1336 kB
Stron:: 16

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IPT65R025CM8

650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.

Producent:: Infineon
Rozmiar:: 1335 kB
Stron:: 16

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IPT65R040CM8

650 V CoolMOS™ 8 power transistor The 650 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 650 V CoolMOS™ 7 MOSFET family including C7 and CFD7. It comes with better efficiency compare to its predeccesor. 650 V CoolMOS™ 8 offers the additional 50 V buffer to fulfill the requirement of higher power applications. Beside these advantages, it also includes fast body diode across whole portfolio.

Producent:: Infineon
Rozmiar:: 1335 kB
Stron:: 16

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IPTC017N10NM5LF2

OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.7 mΩ, 351 A in TOLT package IPTC017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the TO-Leaded top-side package. Offering the industry’s lowest RDS(on) and wide SOA at 25˚C. With the combination of OptiMOS™ 5 Linear FET 2 technology and TOLT package, the IPTC017N10NM5LF2 is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery managem

Producent:: Infineon
Rozmiar:: 1261 kB
Stron:: 15

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IPTC068N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology.

Producent:: Infineon
Rozmiar:: 1246 kB
Stron:: 15

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IPTC034N15NM6

OptiMOS™ 6 power MOSFET 150 V normal level in TOLT package for top-side cooling IPTC034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. Combined with TOLT package, it enables top-side cooling for superior thermal performance, dissipating up to 95% of the heat through the heatsink and a

Producent:: Infineon
Rozmiar:: 1239 kB
Stron:: 13

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IPTA60R180CM8

IPTA60R180CM8 600 V CoolMOS™ 8 power transistor The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Producent:: Infineon
Rozmiar:: 1230 kB
Stron:: 14

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IPTG020N13NM6

OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLG OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72-84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.

Producent:: Infineon
Rozmiar:: 1217 kB
Stron:: 11

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IPTG029N13NM6

OptiMOS™ 6 power MOSFET 135 V Normal Level in TOLG OptiMOS™ 6 135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72-84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.

Producent:: Infineon
Rozmiar:: 1209 kB
Stron:: 11

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IPT026N12NM6

OptiMOS™ 6 power MOSFET normal level 120 V in TOLL package This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance. Compared to OptiMOS™ 3, the technology features: up to 58% better RDS(on), up to 66% better FOMg, up to 90% better Qrr and up to 35% better FOMoss. IPT026N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

Producent:: Infineon
Rozmiar:: 1167 kB
Stron:: 13

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IPT047N15NM6

OptiMOS™ 6 power MOSFET 150 V normal level in TOLL package IPT047N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

Producent:: Infineon
Rozmiar:: 1163 kB
Stron:: 13

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IPT034N15NM6

OptiMOS™ 6 power MOSFET 150 V normal level in TOLL package IPT034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

Producent:: Infineon
Rozmiar:: 1163 kB
Stron:: 13

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IPT015N10N5ATMA1

Trans MOSFET N-CH 100V 243A 8-Pin HSOF T/R

Producent:: Infineon
Rozmiar:: 1062 kB
Stron:: 11

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IPT009N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in TOLL OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.