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    IQD020N10NM5

    OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQD020N10NM5 normal-level comes in a PQFN 5x6 Source-Down package. It´s industry’s lowest RDS(on) of 2,0 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
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    Infineon
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    1256 kB
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    11
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    IQDH45N04LM6

    OptiMOS™ power MOSFETs 40 V logic level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQDH45N04LM6 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like battery-powered tools, SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data
    Producent:
    Infineon
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    1250 kB
    Stron:
    11
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    IQD005N04NM6

    OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down package with very low RDS(on). The power MOSFET IQD005N04NM6 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,5 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
    Producent:
    Infineon
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    1246 kB
    Stron:
    11
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    IQD063N15NM5

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQD063N15NM5 comes in a PQFN 5x6 Source-Down package. It's industry’s lowest RDS(on) of 6.3 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like SMPS, telecom power, server, solar, battery-powered applications, medium voltage drives, drones, robotics, light electric vehicles, and
    Producent:
    Infineon
    Rozmiar:
    1238 kB
    Stron:
    11
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    IQDH88N06LM5

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQDH88N06LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like class-D audio, high-power chargers, SMPS, telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datac
    Producent:
    Infineon
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    1229 kB
    Stron:
    11
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    IQD009N06NM5

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQD009N06NM5 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    11
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    IQDH29NE2LM5

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQDH29NE2LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-serve
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    11
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    IQD063N15NM5SC

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD063N15NM5SC comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1079 kB
    Stron:
    12
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    IQDH45N04LM6SC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1007 kB
    Stron:
    13
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    IQD005N04NM6SC

    OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD005N04NM6SC comes with a low RDS(on) of 0,47 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1006 kB
    Stron:
    13
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    IQD020N10NM5CGSC

    OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD020N10NM5CGSC comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large varie
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQDH45N04LM6CGSC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQD016N08NM5CGSC

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD016N08NM5CGSC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12
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    IQD020N10NM5SC

    OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD020N10NM5SC comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1002 kB
    Stron:
    12
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    IQDH88N06LM5CGSC

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH88N06LM5CGSC comes with a low RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variet
    Producent:
    Infineon
    Rozmiar:
    1002 kB
    Stron:
    12
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    IQD016N08NM5SC

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQD016N08NM5SC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1001 kB
    Stron:
    12
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    IQDH29NE2LM5CGSC

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH29NE2LM5CGSC comes with industry’s lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD005N04NM6CGSC

    OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD005N04NM6CGSC comes with a low RDS(on) of 0,47 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large v
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD009N06NM5SC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD009N06NM5SC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
  20. Podgląd PDFa
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    IQDH88N06LM5SC

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQDH88N06LM5SC comes with a low RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
  21. Podgląd PDFa
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    IQD009N06NM5CGSC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQDH35N03LM5SC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQDH35N03LM5SC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQDH35N03LM5CGSC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH35N03LM5CGSC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variet
    Producent:
    Infineon
    Rozmiar:
    999 kB
    Stron:
    12
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    IQDH29NE2LM5SC

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on) The power MOSFET IQDH29NE2LM5SC comes with industry’s lowest RDS(ON) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    999 kB
    Stron:
    12
  25. Podgląd PDFa
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    IQD063N15NM5CGSC

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD063N15NM5CGSC comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large varie
    Producent:
    Infineon
    Rozmiar:
    853 kB
    Stron:
    12