IRHLUBCN730Z4

From 20 V to 650 V, space-qualified to DLA and ESA standards Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBC, 300 krad(Si) TID, COTS

IRHNPC9A7110

IRHNM9A7024SCS

Rad hard, 60V, 25A, single N-channel MOSFET in a SMD-0.2 package – SMD-0.2 package, 100 krad(Si) TID, QIRL. This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.

IRHNPC9A7214

From 20 V to 650 V, space-qualified to DLA and ESA standards Rad hard, -250V, 4.4A, N-channel MOSFET, R9 in SMD 0.1 package - 300 krad(Si) TID, QPL

IRHYS9A97130CM

JANSR2N7660D5 is a rad hard, single P-channel MOSFET in a TO-257AA Tabless low ohmic package. With -100V and -23A capabilities, this R9 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

IRHNPC9A3014

IRHNPC9A3014 R9 N-channel MOSFET is a rad hard, 60V, 10A MOSFET in a SMD-0.1 package. It has electrical performance up to 300krad(Si) TID and is COTS classified. This MOSFET provides superior power performance for space applications with improved immunity to SEE and LET up to 88.6 MeV·cm2/mg. Its low RDS(on) and fast switching times make it ideal for DC-DC converters or motor drives in power designs for satellite bus and payload systems.

IRHNME9A7024

Rad hard, 60 V, 25 A, rad hard MOSFET in SMD-0.2e Ceramic Lid package – 100 krad TID, COTS IRHNME9A7024 is a R9 generation, rad hard, single N-channel MOSFET in a SMD-0.2e package with a ceramic lid that can handle 60V and 25A. It is optimal for space applications as its combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converter or motor drives. This device retains all of the well established advantages of MOSFETs such as voltage control an

IRHNPC9A3110

IRHNS9A97064

IRHYS9A97230CM

IRHYS9A97230CM P-channel MOSFET is rad hard, with -200V and -14A, in a singleTO-257AA low ohmic package with electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

IRHYB9A97034CM

JANSR2N7659D5 is a rad hard, single P-channel MOSFET in a TO-257AA Tabless low ohmic package. With -60V and -30A capabilities, this R9 generation device has up to 100krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.

IRHNKC9A7034

From 20 V to 650 V, space-qualified to DLA and ESA standards Rad hard, 60V, 40A, N-channel MOSFET, R9 in SMD-0.5e (ceramic lid) package – SMD-0.5e, 100 krad(Si) TID, COTS

IRHNKC67C30

From 20 V to 650 V, space-qualified to DLA and ESA standards Rad hard, 600V, 3.5A, N-channel MOSFET, R6 in SMD-0.5e Ceramic Lid package - SupIR-SMD, 100 krad(Si) TID, COTS

IRHNKC9A7234

Rad hard, N-channel 250 V, 17 A MOSFET in SMD-0.5e package Rad hard, 250V, 17A, N-channel MOSFET, R9 in SMD-0.5e (ceramic lid) package – SMD-0.5e, 100 krad(Si) TID, QPL

IRHMS9A3264

IRHNS9A3264

IRHNKC9A7130

IRHNKC9A97130

JANSR2N7660U3CE P-channel MOSFET is rad hard, with -100V and -24A, in a single SMD-0.5e Ceramic Lid package. It is QPL classified and has electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

IRHNKC9A97034

From -30 V to -200 V, DLA-qualified for space applications Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD-0.5e (Ceramic Lid), 300 krad(Si) TID, QPL

IRHMS9A97160

From -30 V to -200 V, DLA-qualified for space applications Rad hard, -100V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) TID, QPL

IRHMS9A93260

From -30 V to -200 V, DLA-qualified for space applications Rad hard, -200V, -45A, P-channel MOSFET, R9 in Low-Ohmic TO-254AA package - 300 krad(Si) TID, QPL

IRHNS9A97160

IRHNS9A97160 P-channel MOSFET is rad hard, with -100V and -91A, in a single SupIR-SMD package with electrical performance up to 100krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

IRHMS9A93064

From -30 V to -200 V, DLA-qualified for space applications Rad hard, -60V, -45A, P-channel MOSFET, R9 in TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

IRHNS9A97260

From -30 V to -200 V, DLA-qualified for space applications Rad hard, -200V, -62A, P-channel MOSFET, R9 in SUPIR-SMD package – SUPIR-SMD 100 krad(Si) TID, QPL

IRHLUBCN7970Z4S

Cap Ceramic 0.47uF 25V X7R 10% SMD 1206 150°C Plastic T/R