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    ISC046N13NM6

    OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS. Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38% reduction in gate threshold voltage
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    1130 kB
    Stron:
    11
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    ISC037N13NM6

    OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS. Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38% reduction in gate threshold voltage
    Producent:
    Infineon
    Rozmiar:
    959 kB
    Stron:
    11