ISC008N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

ISC025N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

ISC300N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC300N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.

ISC019N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SuperSO8 The OptiMOS™ 7 technology features application-optimized power MOSFETs to meet the requirements of specific applications. The ISC019N08NM7 is a normal level 80 V MOSFET in SuperSO8 packaging with 1.9 mOhm on-resistance.

ISC060N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

ISC024N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SSO8 package OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

ISC034N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SSO8 package OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

ISC011N04NM7V

OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting per

ISC016N08NM8

OptiMOS™ 8 n-channel power MOSFET 80 V in SuperSO8 This OptiMOS™ 8 is a normal level 80 V MOSFET in SuperSO8 packaging with 1.6 mOhm on-resistance.

ISC009N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

ISCH54N04NM7V

OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe

ISCH69N04NM7V

OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe

ISC016N08NM8SC

OptiMOS™ 8 n-channel power MOSFET 80 V in SuperSO8 DSC package with dual-side cooling (DSC) The OptiMOS™ 8 power MOSFET in SuperSO8 DSC (dual-side cooling) package offers all thermal management benefits of dual-side cooling solutions with an industry-standard footprint.

ISC007N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

ISC007N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

STEVAL-ISC003V1

STUSB4710 evaluation board USB PD controller with on-board DC-DC

STEVAL-ISC004V1

STUSB4710A evaluation board (with on-board DC-DC)

ISC300

ISC-1812

Wirewound, Surface-Mount, Molded, Shielded Inductors

STEVAL-ISC001V1

30 W AC-DC adapter based on the L6565

ISC1812ES221K

Ind Chip Shielded/Molded Wirewound 220uH 10% 796KHz 40Q-Factor Ferrite 105mA 1812 T/R

ISC1812ES2R2K

Ind Chip Shielded/Molded Wirewound 2.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 390mA 1812 T/R

ISC-1210

Wirewound, Surface-Mount, Molded, Shielded Inductors

ISC1210ERR22M

Ind Chip Shielded/Molded Wirewound 220nH 20% 25.2MHz 40Q-Factor Powdered Iron 565mA 1210 T/R