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    ISC033N03LF2S

    StrongIRFET™ 2 power MOSFET 30 V in SuperSO8 5x6 package Infineon’s StrongIRFET™ 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a SuperSO8 5x6 package. This product addresses a broad range of applications from low- to high-switching frequency.Compared to the previous technology, the ISC033N03LF2S achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
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    Infineon
    Rozmiar:
    1443 kB
    Stron:
    14
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    ISC032N12LM6

    OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 3.2 mOhm on-resistance. ISC032N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
    Producent:
    Infineon
    Rozmiar:
    1370 kB
    Stron:
    11
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    ISC037N12NM6

    OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family .
    Producent:
    Infineon
    Rozmiar:
    1312 kB
    Stron:
    11
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    ISC031N08NM6

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on) and ~40% improved FOMQg x RDS(on) and FOMQgd x RDS(on) in SuperSO8 The performance improvement enables easier thermal design and less paralleling, leading to higher
    Producent:
    Infineon
    Rozmiar:
    1311 kB
    Stron:
    11
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    ISC034N08NM7

    OptiMOS™ 7 n-channel power MOSFET 80 V in SSO8 package OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.
    Producent:
    Infineon
    Rozmiar:
    1269 kB
    Stron:
    15
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    ISC031N08NM6SC

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!
    Producent:
    Infineon
    Rozmiar:
    1096 kB
    Stron:
    15
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    ISC030N12NM6

    OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.04 mOhm on-resistance. ISC030N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family .
    Producent:
    Infineon
    Rozmiar:
    1032 kB
    Stron:
    11
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    ISC037N13NM6

    OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS. Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses. The 38% reduction in gate threshold voltage
    Producent:
    Infineon
    Rozmiar:
    959 kB
    Stron:
    11