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    ISG0614N06NM5H

    OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The optimized lead-frame & Cu-clip significantly improves the package thermal performance.
    Producent:
    Infineon
    Rozmiar:
    1046 kB
    Stron:
    11
  2. Podgląd PDFa
    Do dokumentacji »

    ISG0614N06NM5HSC

    OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by a
    Producent:
    Infineon
    Rozmiar:
    1018 kB
    Stron:
    11