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    ISK018NE1LM7

    OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS(on) of 2.15 mOhm while offering a pulsed current capability of more than 500 A, with a typical thermal resistance junction to case-bottom (RthJC) of 1.6 K/W. The small 4 mm2 footprint package enables significant space saving with PCB layout flexibility while having form factor improvement.
    Producent:
    Infineon
    Rozmiar:
    1260 kB
    Stron:
    11