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    IAUCN04S7N006T

    40 V, N-Ch, 0.64mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 7 IAUCN04S7N006T is an automotive MOSFET built with Infineon's leading-edge, power semiconductor technology, OptiMOS™ 7 40V. Offered in our innovative, top-side cooled SSO10T 5x7 mm² SMD package, it significantly advances cooling, power density and system costs. It is designed for the high performance, quality and robustness required for automotive applications. The package is JEDEC listed, suitable for open market use and with second source
    Producent:
    Infineon
    Rozmiar:
    2762 kB
    Stron:
    12
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    IPM018N10NM5LF2

    OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C. This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type. The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection appl
    Producent:
    Infineon
    Rozmiar:
    1120 kB
    Stron:
    15
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    ADG1207L

    Low Capacitance, 8-Channel iCMOS Multiplexer with 1.2 V and 1.8 V JEDEC Logic Compliance
    Producent:
    Analog Devices
    Rozmiar:
    998 kB
    Stron:
    23
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    IAUCN04S6N013T

    40 V, N-Ch, 1.32mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 6 This innovative TSC package provides exceptional cooling, high power density, and optimized system costs. The initial portfolio includes four products in the OptiMOS™ 6 series, rated at 40V, with plans for future expansion. The RDS(on) max values range from 1.73 mΩ down to an impressive 0.75 mΩ. The SSO10T TSC package is JEDEC listed, ensuring it is suitable for open market use and offers broad compatibility with second sources.
    Producent:
    Infineon
    Rozmiar:
    895 kB
    Stron:
    12
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    ADG1412L

    1.5 Ω R, Quad SPST Switch with 1.2 V and 1.8 V JEDEC Logic Compliance
    Producent:
    Analog Devices
    Rozmiar:
    894 kB
    Stron:
    19
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    IAUCN04S6N017T

    40 V, N-Ch, 1.73mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 6 This innovative TSC package provides exceptional cooling, high power density, and optimized system costs. The initial portfolio includes four products in the OptiMOS™ 6 series, rated at 40V, with plans for future expansion. The RDS(on) max values range from 1.73 mΩ down to an impressive 0.75 mΩ. The SSO10T TSC package is JEDEC listed, ensuring it is suitable for open market use and offers broad compatibility with second sources.
    Producent:
    Infineon
    Rozmiar:
    881 kB
    Stron:
    12
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    IAUCN04S6N007T

    40 V, N-Ch, 0.75mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 6 This innovative TSC package provides exceptional cooling, high power density, and optimized system costs. The initial portfolio includes four products in the OptiMOS™ 6 series, rated at 40V, with plans for future expansion. The RDS(on) max values range from 1.73 mΩ down to an impressive 0.75 mΩ. The SSO10T TSC package is JEDEC listed, ensuring it is suitable for open market use and offers broad compatibility with second sources.
    Producent:
    Infineon
    Rozmiar:
    874 kB
    Stron:
    12
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    IAUCN04S6N009T

    40 V, N-Ch, 0.9mΩ max, Automotive MOSFET, SSO10T (5x7), OptiMOS™ 6 This innovative TSC package provides exceptional cooling, high power density, and optimized system costs. The initial portfolio includes four products in the OptiMOS™ 6 series, rated at 40V, with plans for future expansion. The RDS(on) max values range from 1.73 mΩ down to an impressive 0.75 mΩ. The SSO10T TSC package is JEDEC listed, ensuring it is suitable for open market use and offers broad compatibility with second sources.
    Producent:
    Infineon
    Rozmiar:
    872 kB
    Stron:
    12
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    ADG1408L

    4 Ω R, 8-Channel iCMOS Multiplexers with 1.2 V and 1.8 V JEDEC Logic Compliance
    Producent:
    Analog Devices
    Rozmiar:
    852 kB
    Stron:
    21
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    ADG1634L

    4.7 Ω R, Quad SPDT Switch with 1.2 V and 1.8 V JEDEC Logic Compliance
    Producent:
    Analog Devices
    Rozmiar:
    774 kB
    Stron:
    22
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    2ED2748S01G

    160 V half bridge SOI gate driver with integrated bootstrap diode MOTIX™ 160 V half bridge with typical 8 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2748 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    574 kB
    Stron:
    23
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    2ED2744S01G

    160 V half bridge SOI gate driver with integrated bootstrap diode MOTIX™ 160 V half bridge with typical 2 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2744 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    574 kB
    Stron:
    23
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    2ED2742S01G

    160 V half bridge SOI gate driver with integrated bootstrap diode MOTIX™ 160 V half bridge with typical 1 A source and 2 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2742 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    556 kB
    Stron:
    24
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    2ED2772S01G

    160 V half bridge SOI gate driver with integrated bootstrap diode MOTIX™ 160 V half bridge SOI based gate driver with typical 1 A source and 2 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel MOSFETS. Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2772 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    555 kB
    Stron:
    24
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    2ED2778S01G

    160 V half bridge SOI gate driver with integrated bootstrap diode MOTIX™ 160 V half bridge SOI based gate driver with typical 8 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel MOSFETS. Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2778 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    554 kB
    Stron:
    23
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    2ED2738S01G

    160 V high side, low side SOI gate driver with integrated bootstrap diode MOTIX™ 160 V high side, low side with typical 4 A source and 8 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2738 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    545 kB
    Stron:
    22
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    2ED2734S01G

    160 V high side, low side SOI gate driver with integrated bootstrap diode MOTIX™ 160 V high side, low side with typical 2 A source and 4 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2734 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    545 kB
    Stron:
    22
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    2ED2732S01G

    160 V high side, low side SOI gate driver with integrated bootstrap diode MOTIX™ 160 V high side, low side with typical 1 A source and 2 A sink currents in a small footprint VSON10, 3x3 mm package for N-Channel . Integrated bootstrap diodes are used to supply the external high side bootstrap capacitor. Protection features include under voltage lockout on both Vcc and VB pins. The 2ED2732 is fully qualified for industrial applications according to the relevant tests of JEDEC78/20/22.
    Producent:
    Infineon
    Rozmiar:
    544 kB
    Stron:
    22
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    TLI5590-A6W

    TLI5590-A6W is a two-channel radiometric gradiometer for high precise length measurement. Qualified for industrial / consumer applications acc. to JEDEC JESD47K standard. It has super high accuracy better than 10 µm achievable by use of proper linear or rotary magnet encoder. The excellent channel matching of less than 5 % over full magnetic input range of ±5 mT. Potential application is lens positioning for zoom and focus adjusting in cameras.
    Producent:
    Infineon
    Rozmiar:
    452 kB
    Stron:
    15