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    IAUMN04S7N009G

    40 V, N-Ch, 0.86 mΩ, Automotive Power MOSFET, mTOLG (8x8), OptiMOS™ 7 IAUMN04S7N009G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.
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    Infineon
    Rozmiar:
    3355 kB
    Stron:
    12
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    IAUMN04S7N005G

    40 V, N-Ch, 0.5 mΩ, Automotive Power MOSFET, mTOLG (8x8), OptiMOS™ 7 IAUMN04S7N005G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3355 kB
    Stron:
    12
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    IAUMN04S7N006G

    40 V, N-Ch, 0.6 mΩ, Automotive Power MOSFET, mTOLG (8x8), OptiMOS™ 7 IAUMN04S7N006G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3341 kB
    Stron:
    12
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    IAUMN04S7N011G

    40 V, N-Ch, 1.14 mΩ, Automotive Power MOSFET, mTOLG (8x8), OptiMOS™ 7 IAUMN04S7N011G is a high-performance, N-channel OptiMOS™ automotive power MOSFET. With an extended qualification beyond AEC-Q101, enhanced electrical testing, and a robust design, this device ensures reliable operation in harsh environments. Operating temperatures range from -55 to 175°C, MSL2 up to 260°C peak reflow, and 100% avalanche testing make it ideal for demaning automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3311 kB
    Stron:
    12
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    IAUMN08S5N012G

    80 V, N-Ch, 1.2 mΩ max, Automotive MOSFET, mTOLG (8x8), OptiMOS™ 5 OptiMOS™ 5 80V automotive MOSFET offered in our new mTOLG 8x8mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. This mTOLG package MOSFETs is recommended for aluminum (Al) core IMS and copper (Cu) based metal substrates because of its enhanced TCoB performance.
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    Infineon
    Rozmiar:
    1289 kB
    Stron:
    12
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    IAUMN08S5N013G

    80 V, N-Ch, 1.3 mΩ max, Automotive MOSFET, mTOLG (8x8), OptiMOS™ 5 OptiMOS™ 5 80V automotive MOSFET offered in our new mTOLG 8x8mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. This mTOLG package MOSFETs is recommended for aluminum (Al) core IMS and copper (Cu) based metal substrates because of its enhanced TCoB performance.
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    Infineon
    Rozmiar:
    1288 kB
    Stron:
    12
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    IPM018N10NM5LF2

    OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C. This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type. The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection appl
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    Infineon
    Rozmiar:
    1120 kB
    Stron:
    15