elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    F3L6MR20W2M1H-B70

    CoolSiC™ MOSFET 3-level module 2000 V EasyPACK™ 2B CoolSiC™ MOSFET 3-level module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    27
  2. Podgląd PDFa
    Do dokumentacji »

    FF6MR12W2M1H-B70

    CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 6 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    832 kB
    Stron:
    18
  3. Podgląd PDFa
    Do dokumentacji »

    FF4MR12W2M1H-B70

    CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 4 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    817 kB
    Stron:
    18
  4. Podgląd PDFa
    Do dokumentacji »

    FS33MR12W1M1H-B70

    CoolSiC™ MOSFET sixpack module 1200 V EasyPACK™ 1B CoolSiC™ MOSFET sixpack module 1200 V, 33 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    785 kB
    Stron:
    18
  5. Podgląd PDFa
    Do dokumentacji »

    F4-8MR12W2M1H-B70

    CoolSiC™ MOSFET fourpack module 1200 V EasyPACK™ 2B CoolSiC™ MOSFET fourpack module 1200 V, 8 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    746 kB
    Stron:
    18
  6. Podgląd PDFa
    Do dokumentacji »

    F4-11MR12W2M1H-B70

    CoolSiC™ MOSFET fourpack module 1200 V EasyPACK™ 2B CoolSiC™ MOSFET fourpack module 1200 V, 11 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    727 kB
    Stron:
    18
  7. Podgląd PDFa
    Do dokumentacji »

    FS13MR12W2M1H-C55

    CoolSiC™ MOSFET sixpack module 1200 V EasyPACK™ 2B CoolSiC™ MOSFET 1200 V, 13 mΩ six pack module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC temperature sensor and PressFIT contact technology, aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    721 kB
    Stron:
    16
  8. Podgląd PDFa
    Do dokumentacji »

    FF6MR20W2M1H-B70

    CoolSiC™ MOSFET half-bridge module 2000 V EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic
    Producent:
    Infineon
    Rozmiar:
    694 kB
    Stron:
    18
  9. Podgląd PDFa
    Do dokumentacji »

    FF11MR12W2M1H-B70

    CoolSiC™ MOSFET dual module 1200 V EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 11 mΩ G1 with integrated NTC temperature sensor, PressFIT contact technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    576 kB
    Stron:
    16
  10. Podgląd PDFa
    Do dokumentacji »

    FF17MR12W1M1H-B70

    Half-bridge 1200 V module with CoolSiC™ MOSFET EasyDUAL™ 1B 1200 V, 17 mΩ half-bridge module with CoolSiC™ MOSFET enhanced generation 1, integrated NTC, PressFIT Contact Technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    552 kB
    Stron:
    16
  11. Podgląd PDFa
    Do dokumentacji »

    IGT60R190D1

    Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R190D1 for ultimate efficiency and reliability The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applicat
    Producent:
    Infineon
    Rozmiar:
    543 kB
    Stron:
    16
  12. Podgląd PDFa
    Do dokumentacji »

    FF8MR12W1M1H-B70

    CoolSiC™ MOSFET half-bridge module 1200 V EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic.
    Producent:
    Infineon
    Rozmiar:
    534 kB
    Stron:
    16
  13. Podgląd PDFa
    Do dokumentacji »

    PCAN

    High Power Aluminum Nitride, Wraparound Surface Mount, Precision Thin Film Chip Resistor (Up to 6 W)
    Producent:
    Vishay
    Rozmiar:
    111 kB
    Stron:
    5
  14. Podgląd PDFa
    Do dokumentacji »

    PCNM

    High Power Aluminum Nitride, Wraparound Surface Mount, Precision Thin Film Non-Magnetic Chip Resistor (Up to 6 W)
    Producent:
    Vishay
    Rozmiar:
    101 kB
    Stron:
    5
  15. Podgląd PDFa
    Do dokumentacji »

    RCP

    Thick Film Chip Resistors, Industrial, High Power, Aluminum Nitride Substrate
    Producent:
    Vishay
    Rozmiar:
    88 kB
    Stron:
    4