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    TLE49SRC8D

    Dual channel magnetic angle sensor with outstanding stray field robustness, high accuracy and ASIL level D The TLE49SRC8D includes a comprehensive set of on-chip components, including spatially separated Hall- , temperature-, and stress sensors, as well as a signal conditioning circuit, analog-to-digital converters, and a digital signal processor. Additionally, the IC includes a clock, voltage regulators and internal protection circuitry to ensure safe and reliable operation.
    Producent:
    Infineon
    Rozmiar:
    1500 kB
    Stron:
    36
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    IMT44R015M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 15 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1476 kB
    Stron:
    18
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    IMT44R025M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 25 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1474 kB
    Stron:
    18
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    IMT44R011M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 11 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1471 kB
    Stron:
    18
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    R5F52608ADFP#10

    Microcontrollers with Outstanding Power Efficiency and Advanced Touch Functions
    Producent:
    Renesas Electronics
    Rozmiar:
    1366 kB
    Stron:
    142
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    IMW40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1349 kB
    Stron:
    17
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    IMW40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1345 kB
    Stron:
    17
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    IMW40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    IMW40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    IMW40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1341 kB
    Stron:
    17
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    IMSQ120R012M2HH

    CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
    Producent:
    Infineon
    Rozmiar:
    1338 kB
    Stron:
    17
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    IMCQ120R005M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 5 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1310 kB
    Stron:
    18
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    IMCQ120R004M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1305 kB
    Stron:
    18
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    IMLT40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1304 kB
    Stron:
    18
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    IMLT40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
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    IMLT40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
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    IMLT40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
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    IMLT40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1298 kB
    Stron:
    18
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    IMZA40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
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    IMZA40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
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    IMZA40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    17
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    IMZA40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    17
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    IMZA40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    17
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    FCH041N60F_F085

    SuperFET® II MOSFET is Fairchild Semiconductor’s brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance
    Producent:
    Fairchild Semiconductor
    Rozmiar:
    617 kB
    Stron:
    9