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    GS-065-011-1-L-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-011-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-011-1-L-TR is a bottom-side cooled transistor in a 5x6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other moderate power applications.
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    Infineon
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    1217 kB
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    17
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    GS-065-004-1-L-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-004-1-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-004-1-L-TR is a bottom-side cooled transistor in a 5×6 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other low power applications.
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    Infineon
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    1105 kB
    Stron:
    17
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    GS-065-011-2-L-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-011-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-011-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or other moderate power applications.
    Producent:
    Infineon
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    1044 kB
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    17
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    GS-065-030-2-L-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-030-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-030-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in high power server and data center power supplies and industrial use power applications.
    Producent:
    Infineon
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    1039 kB
    Stron:
    17
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    GS-065-030-6-LR-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-030-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
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    Infineon
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    973 kB
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    17
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    GS-065-018-6-LR-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-018-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    959 kB
    Stron:
    17
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    GS-065-011-6-LR-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-011-6-LR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    945 kB
    Stron:
    18
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    GS-065-011-6-L-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-011-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    932 kB
    Stron:
    17
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    GS-065-018-2-L-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-018-2-L-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS-065-018-2-L-TR is a bottom-side cooled transistor in a 8x8 mm PDFN package that enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications.
    Producent:
    Infineon
    Rozmiar:
    916 kB
    Stron:
    17
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    GS-065-008-6-L-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    879 kB
    Stron:
    17
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    GS-065-004-6-L-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-004-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    865 kB
    Stron:
    17
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    TSM120N06LCR RLG

    N-Ch 60 V 54 A 69 W 0,012R PDFN56 Taiwan Semiconductor TSM120N06LCR RLG N/A N/A TSM120N06LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    418 kB
    Stron:
    6
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    TSM300NB06CR RLG

    N-Ch 60 V 27 A 56 W 0,03R PDFN56 Taiwan Semiconductor TSM300NB06CR RLG N/A N/A TSM300NB06CR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    379 kB
    Stron:
    6
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    TSM110NB04DCR RLG

    2xN-Ch 40V 48A 48W 0,011R PDFN56 Taiwan Semiconductor TSM110NB04DCR RLG N/A N/A TSM110NB04DCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    349 kB
    Stron:
    6
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    TSM250NB06DCR RLG

    2xN-Ch 60V 30A 48W 0,025R PDFN56 Taiwan Semiconductor TSM250NB06DCR RLG N/A N/A TSM250NB06DCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    349 kB
    Stron:
    6
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    TSM300NB06DCR RLG

    2xN-Ch 60V 25A 40W 0,03R PDFN56 Taiwan Semiconductor TSM300NB06DCR RLG N/A N/A TSM300NB06DCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    349 kB
    Stron:
    6
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    TSM150NB04DCR RLG

    2xN-Ch 40V 38A 40W 0,015R PDFN56 Taiwan Semiconductor TSM150NB04DCR RLG N/A N/A TSM150NB04DCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    348 kB
    Stron:
    6
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    TSM089N08LCR RLG

    N-Ch 80 V 67 A 83 W 0,0089R PDFN56 Taiwan Semiconductor TSM089N08LCR RLG N/A N/A TSM089N08LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    336 kB
    Stron:
    6
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    TSM025NB04CR RLG

    N-Ch 40 V 161 A 136 W 0,0025R PDFN56 Taiwan Semiconductor TSM025NB04CR RLG N/A N/A TSM025NB04CR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    320 kB
    Stron:
    6
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    TSM048NB06LCR RLG

    N-Ch 60 V 107 A 136 W 0,0048R PDFN56 Taiwan Semiconductor TSM048NB06LCR RLG N/A N/A TSM048NB06LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    309 kB
    Stron:
    6
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    TSM280NB06LCR RLG

    N-Ch 60 V 28 A 56 W 0,028 R PDFN56 Taiwan Semiconductor TSM280NB06LCR RLG N/A N/A TSM280NB06LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    306 kB
    Stron:
    6
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    TSM110NB04LCR RLG

    N-Ch 40 V 54 A 68 W 0,011R PDFN56 Taiwan Semiconductor TSM110NB04LCR RLG N/A N/A TSM110NB04LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    306 kB
    Stron:
    6
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    TSM130NB06CR RLG

    N-Ch 60 V 51 A 83 W 0,013R PDFN56 Taiwan Semiconductor TSM130NB06CR RLG N/A N/A TSM130NB06CR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    305 kB
    Stron:
    6
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    TSM110NB04CR RLG

    N-Ch 40 V 54 A 68 W 0,011R PDFN56 Taiwan Semiconductor TSM110NB04CR RLG N/A N/A TSM110NB04CR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    305 kB
    Stron:
    6
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    TSM130NB06LCR RLG

    N-Ch 60 V 51 A 83 W 0,013R PDFN56 Taiwan Semiconductor TSM130NB06LCR RLG N/A N/A TSM130NB06LCR RLG
    Producent:
    Taiwan Semiconductor
    Rozmiar:
    298 kB
    Stron:
    6