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    IQE004NE1LM7SC

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down with dual-side cooling IQE004NE1LM7SC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Power SMPS applications.
    Producent:
    Infineon
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    1291 kB
    Stron:
    11
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    IQE004NE1LM7CGSC

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate with dual-side cooling IQE004NE1LM7CGSC is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized parallelization. The dual-side cooling feature boosts thermal management capabilities, pushing power density and efficiency to the next level in High Powe
    Producent:
    Infineon
    Rozmiar:
    1210 kB
    Stron:
    11
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    IQE004NE1LM7CG

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate IQE004NE1LM7CG is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized for parallelization. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications
    Producent:
    Infineon
    Rozmiar:
    1050 kB
    Stron:
    11
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    Do dokumentacji »

    IQE004NE1LM7

    OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.
    Producent:
    Infineon
    Rozmiar:
    1015 kB
    Stron:
    11