elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    JANSR2N7651U8C

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. R9 N-channel MOSFET JANSR2N7651U8C is a rad hard device in a compact SMD-0.2 package with superior immunity to SEE. Its low RDS(on) and fast switching make it ideal for DC-DC converters and motor drives in satellite bus and payload power systems. Exhibiting temperature stability and voltage control, this QPL classified MOSFET can withstand TID up to 100krad(Si) and LET up to 90 MeV·cm2
    Producent:
    Infineon
    Rozmiar:
    1875 kB
    Stron:
    14
  2. Podgląd PDFa
    Do dokumentacji »

    JANSR2N7650U8C

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. JANSR2N7650U8C is a rad hard 60V, 25A, single R9 N-channel MOSFET with improved immunity to SEE and LET up to 90 MeV·cm2/mg. Its low RDS(on) and fast switching make it ideal for space applications requiring superior power MOSFETs such as DC-DC converters and motor drives. Electrical performance is up to 100krad(Si) TID. JANSR2N7650U8C is QPL qualified.
    Producent:
    Infineon
    Rozmiar:
    1198 kB
    Stron:
    14
  3. Podgląd PDFa
    Do dokumentacji »

    IRHNM9A7024SCS

    Rad hard, 60V, 25A, single N-channel MOSFET in a SMD-0.2 package – SMD-0.2 package, 100 krad(Si) TID, QIRL. This part is active, but not recommended for new design. A new footprint compatible package version will be released soon.
    Producent:
    Infineon
    Rozmiar:
    1156 kB
    Stron:
    14
  4. Podgląd PDFa
    Do dokumentacji »

    Test-Test

    MPLAB Harmony Release Notes and Contents (v2.06)
    Producent:
    Microchip
    Rozmiar:
    988 kB
    Stron:
    28
  5. Podgląd PDFa
    Do dokumentacji »

    JANSF2N7506U8C

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. JANSF2N7506U8C is a rad hard, single P-channel MOSFET in a SMD-0.2 package. With -100V and -3.1A capabilities, this ceramic-lidded R4 generation device has up to 300krad(Si) TID and QPL classification. Its low RDS(on) and fast switching times makes it perfect for high-speed switching applications in motor controllers and DC-DC converters in space bus and payload systems.
    Producent:
    Infineon
    Rozmiar:
    959 kB
    Stron:
    14
  6. Podgląd PDFa
    Do dokumentacji »

    IRHLNMC87Y20SCS

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHLNMC87Y20SCS is a rad hard N-channel R8 MOSFET in a SMD-0.2 package. It has a 20V, 17A capacity and can withstand up to 300krad(Si) TID with QIRL space-grade classification. With single-event gate rupture and burnout immunity, it is ideal for interfacing with logic gates, linear ICs, and micro-controllers. The threshold voltage remains stable over full operating temperature and radi
    Producent:
    Infineon
    Rozmiar:
    854 kB
    Stron:
    14
  7. Podgląd PDFa
    Do dokumentacji »

    JANSF2N7503U8C

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. JANSF2N7503U8C is a rad hard, 100V, 6.9A, single N-channel MOSFET housed in a SMD-0.2 package with ceramic lid. Its electrical performance can handle up to 300krad(Si) TID and the device has QPL classification. This R5 MOSFET has low power losses in switching applications such as DC-DC converters and motor control, and useful performance up to an LET of 80MeV·cm2/mg.
    Producent:
    Infineon
    Rozmiar:
    839 kB
    Stron:
    14
  8. Podgląd PDFa
    Do dokumentacji »

    IRHNMC57214SESCS

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHNMC57214SESCS is a rad hard R5 MOSFET designed for space applications. It offers a 250V, 3.7A capacity with low RDS(on) and gate charge reducing power losses in high-speed switching. Proven SEE up to an LET of 80MeV·cm2/mg. In a SMD-0.2C package, it is QIRL classified for high-reliability spacecraft applications, with temperature stability of electrical parameters.
    Producent:
    Infineon
    Rozmiar:
    813 kB
    Stron:
    14
  9. Podgląd PDFa
    Do dokumentacji »

    IRHLNMC77110

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHLNMC77110 R7 MOSFET is a radiation-hardened device with 100V, 6.5A rating. It's a single N-channel MOSFET in a SMD-0.2 package with electrical performance up to 100krad(Si) TID. Ideal for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments, this COTS device maintains single event gate rupture and burnout immunity, while the threshold
    Producent:
    Infineon
    Rozmiar:
    661 kB
    Stron:
    15
  10. Podgląd PDFa
    Do dokumentacji »

    IRHLNMC7S7214

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHLNMC7S7214 is a single N-channel R7 MOSFET in a SMD-0.2 package, designed for use in space and other radiation environments. With a maximum voltage of 250V and current of 3.2A, it provides simple interfacing with CMOS and TTL control circuits. This COTS device offers electrical performance up to 100krad(Si) TID, making it an ideal solution for various designs that operate from a 3.3
    Producent:
    Infineon
    Rozmiar:
    606 kB
    Stron:
    14
  11. Podgląd PDFa
    Do dokumentacji »

    IRHNM9A7120SCS

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHNM9A7120SCS is a rad hard R9 N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 23A, this single MOSFET is ideal for space applications. It has electrical performance up to 100krad(TID) and QIRL classification. The low RDS(on) and fast switching times make it perfect for DC-DC converters and motor control. It retains all the benefits of MOSF
    Producent:
    Infineon
    Rozmiar:
    374 kB
    Stron:
    9
  12. Podgląd PDFa
    Do dokumentacji »

    IRHNM9A3120SCS

    From 20 V to 650 V, space-qualified to DLA and ESA standards. This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHNM9A3120SCS is a rad hard R9 N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 23A, this single MOSFET is ideal for space applications. This space-grade QIRL part has electrical performance up to 300krad(TID) and its low RDS(on) and fast switching times make it perfect for DC-DC
    Producent:
    Infineon
    Rozmiar:
    373 kB
    Stron:
    9
  13. Podgląd PDFa
    Do dokumentacji »

    TEMD5020X01

    Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
    Producent:
    Vishay
    Rozmiar:
    133 kB
    Stron:
    7
  14. Podgląd PDFa
    Do dokumentacji »

    TEMD5120X01

    Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released
    Producent:
    Vishay
    Rozmiar:
    127 kB
    Stron:
    7