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    IMT44R015M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 15 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
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    1476 kB
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    18
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    IMT44R025M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 25 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
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    1474 kB
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    18
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    IMT44R011M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 11 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
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    1471 kB
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    18
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    IMW40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1349 kB
    Stron:
    17
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    IMW40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1345 kB
    Stron:
    17
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    IMW40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    IMW40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
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    17
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    IMW40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1341 kB
    Stron:
    17
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    IMLT40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1304 kB
    Stron:
    18
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    IMLT40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
  11. Podgląd PDFa
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    IMLT40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
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    IMLT40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
  13. Podgląd PDFa
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    IMLT40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1298 kB
    Stron:
    18
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    IMZA40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
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    IMZA40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
  16. Podgląd PDFa
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    IMZA40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    17
  17. Podgląd PDFa
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    IMZA40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    17
  18. Podgląd PDFa
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    IMZA40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    17
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    GS66516B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1143 kB
    Stron:
    17
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    GS-065-060-5-T-A-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-060-5-T-A-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as on-board and off-board EV chargers, traction drive, ACDC and DCDC converters, industrial power supplies and renewable energ
    Producent:
    Infineon
    Rozmiar:
    1124 kB
    Stron:
    18
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    GS66516T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1099 kB
    Stron:
    18
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    GS61004B-TR

    CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
    Producent:
    Infineon
    Rozmiar:
    970 kB
    Stron:
    15
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    GS61008P-TR

    CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
    Producent:
    Infineon
    Rozmiar:
    914 kB
    Stron:
    21
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    IGT60R042D1

    600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package The IGT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 package, it is designed optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.
    Producent:
    Infineon
    Rozmiar:
    548 kB
    Stron:
    16
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    SPC5-UDEDEBG

    PLS JTAG debugger software full license or license renewal
    Producent:
    STMicroelectronics
    Rozmiar:
    80 kB
    Stron:
    4