elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    IRHNA5S97160SCS

    IRHNA5S97160SCS is a R5, rad hard, -100V, -47A, single, P-channel MOSFET in a SMD-2 package. It has electrical performance up to 100krad(Si) TID, QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1785 kB
    Stron:
    8
  2. Podgląd PDFa
    Do dokumentacji »

    IRHNJ5S97230SCS

    IRHNJ5S97230SCS is a R5, rad hard, -200V, -12.5A, single, P-channel MOSFET in a SMD-0.5 package. It has electrical performance up to 100krad(Si) TID, has QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1443 kB
    Stron:
    8
  3. Podgląd PDFa
    Do dokumentacji »

    IRHF7110SCS

    IRHF7110SCS in R4 technology offers a high-performance, rad hard N-channel MOSFET in a TO-205AF package. With a 200V voltage rating and 3.5V gate threshold, this device is ideal for space applications, featuring low RDS(on) and gate charge for reduced power losses during switching. Its electrical performance is characterized up to 100krad(Si) TID and up to LET of 90MeV·cm2/mg, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1367 kB
    Stron:
    13
  4. Podgląd PDFa
    Do dokumentacji »

    JANTXVR2N7262

    JANTXVR2N7262 rad hard N-channel MOSFET is a reliable and high-performing electronic component designed for space applications. With a 200V voltage rating, 5.5A current, and QPL qualification, this single N-channel R5 MOSFET is suitable for high-radiation environments. Its low RDS(on) and gate charge make it perfect for DC-DC converters and motor control applications, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1275 kB
    Stron:
    13
  5. Podgląd PDFa
    Do dokumentacji »

    JANSR2N7647D5

    JANSR2N7647D5 is a radiation-hardened R9 N-channel MOSFET with a 60V and 30A rating, ideal for space applications. Its low RDS(on) and faster switching times increase power density and reduce power losses in high-speed switching applications, while retaining the MOSFET advantages of voltage control, fast switching, ease of paralleling and temperature stability. QPL qualified for space.
    Producent:
    Infineon
    Rozmiar:
    1264 kB
    Stron:
    14
  6. Podgląd PDFa
    Do dokumentacji »

    IRHMS57260SESCS

    IRHMS57260SESCS is a rad hard R5 N-channel MOSFET that can handle up to 200V and 45A, making it ideal for space applications. It comes in a TO-254AA low ohmic package and has electrical performance up to 100krad(Si) TID with QIRL classification. With low RDS(on) and gate charge capabilities, it's efficient in switching applications, while retaining all the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1248 kB
    Stron:
    13
  7. Podgląd PDFa
    Do dokumentacji »

    IRHY597230CMSCS

    IRHY597230CMSCS is a R5, rad hard, -200V, -8A, single, P-channel MOSFET in a TO-257AA package. It has electrical performance up to 100krad(Si) TID and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1163 kB
    Stron:
    8
  8. Podgląd PDFa
    Do dokumentacji »

    IRHNS597Z60

    IRHNS597Z60 is a R5, rad hard, -30V, -56A, single, P-channel MOSFET in a SupIR-SMD package. It has electrical performance up to 100krad(Si) TID and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1133 kB
    Stron:
    8
  9. Podgląd PDFa
    Do dokumentacji »

    IRHMS597Z60SCS

    IRHMS597Z60SCS is a R5, rad hard, -30V, -45A, single, P-channel MOSFET in a TO-254AA low ohmic package. It has electrical performance up to 100krad(Si) TID and QIRL classification. The device also has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    1031 kB
    Stron:
    8
  10. Podgląd PDFa
    Do dokumentacji »

    IRHYS597Z30CM

    IRHYS597Z30CM is a R5, rad hard, -30V, -20A, single, P-channel MOSFET in a TO-257AA low ohmic package. It has electrical performance up to 100krad(Si) TID and its low RDS(on) and gate charge save power in DC to DC converters and motor control. Retaining MOSFETs advantages, it has voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    1018 kB
    Stron:
    8
  11. Podgląd PDFa
    Do dokumentacji »

    IRHNJ5S97130SCS

    IRHNJ5S97130SCS is a R5, rad hard, -100V, -12.5A, single, P-channel MOSFET in a SMD-0.5 package. It has electrical performance up to 100krad(Si) TID, has QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    899 kB
    Stron:
    8
  12. Podgląd PDFa
    Do dokumentacji »

    JANSR2N7394

    This N-channel MOSFET is a single, rad hard power MOSFET with 60V and 35A rating. JANSR2N7394 comes in a TO-254AA package and offers electrical performance up to 100krad(Si) TID. With low RDS(on) and gate charge, this R4 device delivers high-performance power switching for space applications. Retaining all of the well-established advantages of MOSFETs, it offers voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    858 kB
    Stron:
    13
  13. Podgląd PDFa
    Do dokumentacji »

    IRHNJ9130SCSA

    IRHNJ9130SCSA is a R4, rad hard, -100V, -11A, single, P-channel MOSFET in a SMD-0.5 package. It has electrical performance up to 100krad(Si) TID, has QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    696 kB
    Stron:
    13
  14. Podgląd PDFa
    Do dokumentacji »

    IRHY9230CMSCSA

    IRHY9230CMSCSA is a R4, rad hard, -200V, -6.5A, single, P-channel MOSFET in a TO-257AA package, lead form down. It has electrical performance up to 100krad(Si) TID, QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    558 kB
    Stron:
    13
  15. Podgląd PDFa
    Do dokumentacji »

    JANSR2N7648U3

    JANSR2N7648U3 R9 N-channel MOSFET is a 100V, 35A, rad hard device that comes in a SMD-0.5 package. With electrical performance up to 100krad(Si) TID and improved immunity to SEE, it is ideal for space applications. Its low RDS(on) and faster switching times make it suitable for high-speed switching applications, while retaining the well-established advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    439 kB
    Stron:
    9
  16. Podgląd PDFa
    Do dokumentacji »

    IRHYB597Z30CM

    IRHYB597Z30CM is a R5, rad hard, -30V, -20A, single, P-channel MOSFET in a TO-257AA Tabless low ohmic package. It has electrical performance up to 100krad(Si) TID and its low RDS(on) and gate charge save power in DC to DC converters and motor control. Retaining MOSFETs advantages, it has voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    391 kB
    Stron:
    8
  17. Podgląd PDFa
    Do dokumentacji »

    IRHMS6S7264SCS

    IRHMS6S7264SCS R6 N-channel MOSFET is a QIRL-grade, rad hard MOSFET for space applications with 200V and 45A. Its low RDS(on) and gate charge reduce power losses in switching applications like DC-DC converters and motor controllers. Retaining all advantages of MOSFETs, this device is characterized for Total Dose and Single Event Effect up to LET of 90 MeV·cm2/mg.
    Producent:
    Infineon
    Rozmiar:
    388 kB
    Stron:
    9
  18. Podgląd PDFa
    Do dokumentacji »

    IRHY597034CMSCS

    IRHY597034CMSCS is a R5, rad hard, -60V, -18A, single, P-channel MOSFET in a TO-257AA package. It has electrical performance up to 100krad(Si) TID, QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    206 kB
    Stron:
    8
  19. Podgląd PDFa
    Do dokumentacji »

    IRHYB597034CMSCS

    IRHYB597034CMSCS is a R5, rad hard, -60V, -20A, single, P-channel MOSFET in a TO-257AA Tabless low ohmic package. It has electrical performance up to 100krad(Si) TID, QIRL classification and its low RDS(on) and gate charge save power in DC to DC converters and motor control. Retaining MOSFETs advantages, it has voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    193 kB
    Stron:
    8
  20. Podgląd PDFa
    Do dokumentacji »

    IRHNJ9230SCS

    IRHNJ9230SCS is a R4, rad hard, -200V, -6.5A, single, P-channel MOSFET in a SMD-0.5 package. It has electrical performance up to 100krad(Si) TID, QIRL classification and has low RDS(on) and low gate charge, making it suitable for switching applications such as DC-DC converters and motor controllers, while retaining the advantages of MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    183 kB
    Stron:
    8
  21. Podgląd PDFa
    Do dokumentacji »

    IRHMB57Z60SCS

    IRHMB57Z60SCS R5 rad hard N-channel MOSFET in a TO-254AA tabless low ohmic package, has 45A and 30V capabilities. With up to 100krad(Si) TID tolerance and QIRL classification, it has excellent performance and reliability in space and satellite applications. Its low RDS(on) and gate charge make it ideal for DC-DC converters and motor control, while retaining MOSFET benefits like voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    165 kB
    Stron:
    8