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    PS2845-4A

    Ultra-small, 4-Channel, 12-pin, Ultra Shrink SOP Photocoupler
    Producent:
    Renesas Electronics
    Rozmiar:
    5171 kB
    Stron:
    12
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    PS2841-4A

    Ultra-small, 4-Channel, 12-pin, Ultra Shrink SOP Photocoupler
    Producent:
    Renesas Electronics
    Rozmiar:
    5159 kB
    Stron:
    12
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    ISG0613N04NM6H

    OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The optimized lead-frame & Cu-clip significantly improves the package thermal performa
    Producent:
    Infineon
    Rozmiar:
    1048 kB
    Stron:
    11
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    ISG0614N06NM5H

    OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The optimized lead-frame & Cu-clip significantly improves the package thermal performance.
    Producent:
    Infineon
    Rozmiar:
    1046 kB
    Stron:
    11
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    ISG0616N10NM5HSC

    ISG0616N10NM5HSC is a half-bridge dual N-channel MOSFET with 4.0 mΩ RDS(on) for drives and telecom Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by
    Producent:
    Infineon
    Rozmiar:
    1030 kB
    Stron:
    11
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    ISG0613N04NM6HSC

    OptiMOS™ 5 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by a
    Producent:
    Infineon
    Rozmiar:
    1019 kB
    Stron:
    11
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    ISG0614N06NM5HSC

    OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by a
    Producent:
    Infineon
    Rozmiar:
    1018 kB
    Stron:
    11
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    BSG0812ND

    OptiMOS™ 5 25 V Power Block in 5x6 mm² OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
    Producent:
    Infineon
    Rozmiar:
    527 kB
    Stron:
    14
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    380-03005

    HellermannTyton 380-03005 Rurka termokurczliwa bez kleju ShrinKit 321 Universal Basic-PO-X-MIX, 3:1, 177 części
    Producent:
    HellermannTyton
    Rozmiar:
    106 kB
    Stron:
    1