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    TCI

    XENSIV™ TCI H2 gas sensor – a hydrogen sensor based on the thermal conductivity principle The XENSIV™ TCI H2 gas sensor reliably detects hydrogen (H2) in demanding automotive and industrial applications like FCEVs, hydrogen combustion engines, refueling stations, BEVs, ESS, electrolyzers, and stationary fuel cells. It operates on the thermal conductivity (TC) principle, using a differential MEMS design to measure heat transfer through gas. Unlike chemical-based sensors (e.g., MOX, CC), it is resistant to p
    Producent:
    Infineon
    Rozmiar:
    2916 kB
    Stron:
    27
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    C31QUATTRODOCKPD

    Stacja dokująca USB-C® i-tec I-TEC USB-C Quattro Docking Station 85W
    Producent:
    i-tec
    Rozmiar:
    2165 kB
    Stron:
    3
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    IPT65R155CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R155CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, impr
    Producent:
    Infineon
    Rozmiar:
    1505 kB
    Stron:
    14
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    IPT65R125CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R125CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, impr
    Producent:
    Infineon
    Rozmiar:
    1502 kB
    Stron:
    14
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    IPT65R099CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPT65R099CFD7 in a TOLL package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, impr
    Producent:
    Infineon
    Rozmiar:
    1491 kB
    Stron:
    14
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    IPDQ65R125CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R125CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1327 kB
    Stron:
    14
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    IPDQ65R099CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R099CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1318 kB
    Stron:
    14
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    IPDQ65R029CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R029CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1277 kB
    Stron:
    14
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    IPDQ65R017CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R017CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1267 kB
    Stron:
    14
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    IPDQ65R060CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R060CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    14
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    IPDQ65R040CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R040CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    14
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    IPDQ65R080CFD7

    The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies Infineon’s 650 V CoolMOS™ CFD7 superjunction MOSFET IPDQ65R080CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, im
    Producent:
    Infineon
    Rozmiar:
    1248 kB
    Stron:
    14
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    BGAP2S20A

    The BGA P2S20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifie
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    9
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    BGAP2S30A

    The BGA P2S30A is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifie
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    9
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    BGAP2D20A

    The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boast
    Producent:
    Infineon
    Rozmiar:
    910 kB
    Stron:
    9
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    AD9553

    Flexible Clock Translator for GPON, Base Station, SONET/SDH, T1/E1, and Ethernet
    Producent:
    Analog Devices
    Rozmiar:
    804 kB
    Stron:
    44
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    BGAP2D30A

    The BGA P2D30A is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boast
    Producent:
    Infineon
    Rozmiar:
    755 kB
    Stron:
    9
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    BGAP3D30H

    High-Power Pre-Drivers for Wireless Infrastructure The BGA P3D30H is a 3.1 to 4.2 GHz mid-band SiGe RF driver amplifier optimized for 5G massive MIMO base stations and small cells. It provides a high OP1dB of 31 dBm and features single-ended, internally matched 50 Ω in-/output. With high linearity, gain flatness of <0.35 dB, and excellent RF performance can serve as a pre-driver or power amplifier. This device is suited for improving linearization in driven power amplifiers for low-power applications.
    Producent:
    Infineon
    Rozmiar:
    526 kB
    Stron:
    11
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    MAX2043

    1700MHz to 3000MHz High-Linearity, Low LO Leakage Base-Station Rx/Tx Mixer
    Producent:
    Analog Devices
    Rozmiar:
    389 kB
    Stron:
    17
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    BGA7P220

    BGA7P220 driver amplifier The BGA7P220 is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.5 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-
    Producent:
    Infineon
    Rozmiar:
    372 kB
    Stron:
    11
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    BGA7P320

    BGA7P320 driver amplifier The BGA7P320 is a 3.3 to 4.2 GHz mid-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 27.8 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The driver amplifier boasts high linearity and an excellent wide-
    Producent:
    Infineon
    Rozmiar:
    372 kB
    Stron:
    11
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    LPC47N237

    LPC47N237 3.3V I/O Controller for Port Replicators and Docking Stations - Produc
    Producent:
    Microchip
    Rozmiar:
    112 kB
    Stron:
    9
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    2822745-1

    TE Connectivity 2822745-1 TE AMP EV Charge Stations Relays, 1 szt.
    Producent:
    TE Connectivity
    Rozmiar:
    18 kB
    Stron:
    1