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    FF1MR12MM1HW-B11

    CoolSiC™ MOSFET half-bridge module 1200 V EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the base plate for direct liquid cooling.
    Producent:
    Infineon
    Rozmiar:
    1442 kB
    Stron:
    20
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    FF1MR12MM1HP-B11

    CoolSiC™ MOSFET half-bridge module 1200 V EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave structure on the back side of the base plate for direct liquid cooling (FF1MR12MM1HWB11).
    Producent:
    Infineon
    Rozmiar:
    1406 kB
    Stron:
    19
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    2ED1322S12M

    1200 V high current half-bridge gate driver IC with integrated bootstrap diode and OCP EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robu
    Producent:
    Infineon
    Rozmiar:
    1268 kB
    Stron:
    35
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    FF900R17ME7W-B11

    1700 V, 900 A dual IGBT module EconoDUAL™ 3 1700 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, PressFIT contact technology and wave structure on the base plate.
    Producent:
    Infineon
    Rozmiar:
    1227 kB
    Stron:
    17
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    FF900R12ME7W

    1200 V, 900 A dual IGBT module EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and wave structure on the base plate. Also available as variant with PressFIT contact technology: FF900R12ME7WB11.
    Producent:
    Infineon
    Rozmiar:
    1203 kB
    Stron:
    17
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    FF600R12ME4W-B73

    1200 V, 600 A dual IGBT module EconoDUAL™ 3 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC, PressFIT contact technology and wave structure on the base plate.
    Producent:
    Infineon
    Rozmiar:
    1151 kB
    Stron:
    15
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    CYEL18V2562-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    1054 kB
    Stron:
    56
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    CYEL18V5122-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    974 kB
    Stron:
    52
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    CYEL18V2563-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    841 kB
    Stron:
    51
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50
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    391408

    Phaesun Support Structure Mono Axial Zero 391408
    Producent:
    Phaesun
    Rozmiar:
    709 kB
    Stron:
    1
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    392552

    Phaesun Support Structure Tri Angle 392552
    Producent:
    Phaesun
    Rozmiar:
    664 kB
    Stron:
    1
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    AD7547

    Dual 12-Bit CMOS DAC with Parallel Load Input Structure
    Producent:
    Analog Devices
    Rozmiar:
    602 kB
    Stron:
    8
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    6EDM2003L06-F15

    3-Phase Bridge Driver IC Bare Die for IGBT and MOSFET The 6EDM2003L06-F15 is a full bridge driver to control power devices like MOSFETs or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch up may occur at all temperature and voltage conditions.
    Producent:
    Infineon
    Rozmiar:
    537 kB
    Stron:
    17
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    AD7847

    LCMOS Complete, Dual 12-Bit MDAC, Parallel Loading Structure
    Producent:
    Analog Devices
    Rozmiar:
    488 kB
    Stron:
    12
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    AD7885

    16-Bit, Monolithic A/D Converter with a Byte Reading Structure
    Producent:
    Analog Devices
    Rozmiar:
    257 kB
    Stron:
    16