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    KP464

    XENSIV™ - KP464 highly sensitive barometric air pressure sensor IC with SPI interface tailored for ECU and MAF application The Infineon KP464 is a miniaturized barometric air pressure sensor IC based on a capacitive principle. It is surface micromachined with a monolithic integrated signal conditioning circuit implemented in BiCMOS technology. Highly accurate, highly sensitive and reliable features make the sensor the ideal fit for advanced automotive applications, but also for industrial and consumer use
    Producent:
    Infineon
    Rozmiar:
    2986 kB
    Stron:
    36
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    2091907-10

    Electrosoft classe 0/1000V cat 3 taille 2091907-10 Naturalny lateks Rękawice dla elektryków Rozmiar rękawic: 10, XL EN 6
    Producent:
    Electrosoft
    Rozmiar:
    1898 kB
    Stron:
    2
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    ICL8830

    High frequency, single-stage PFC flyback controller for constant voltage output The ICL8830 controller is tailored for high-frequency switching operation and capable to drive GaN and Si MOSFET switching devices. It detects flyback switch drain voltage high frequency oscillation and provides thegate signal with small delay for accurate and reliable quasi-resonant mode (QRM) operation.
    Producent:
    Infineon
    Rozmiar:
    1772 kB
    Stron:
    33
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    AIMCQ120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1585 kB
    Stron:
    16
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    AIMCQ120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1559 kB
    Stron:
    16
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    AIMCQ120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1551 kB
    Stron:
    16
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    AIMCQ120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1548 kB
    Stron:
    16
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    AIMCQ120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1538 kB
    Stron:
    16
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    AIMCQ120R020M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
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    AIMCQ120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
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    IPB95R310PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1189 kB
    Stron:
    14
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    IPB95R130PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1187 kB
    Stron:
    14
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    IPB95R450PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1185 kB
    Stron:
    14
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    IPA95R130PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1082 kB
    Stron:
    14
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    IPA95R310PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1072 kB
    Stron:
    14
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    IPA95R450PFD7

    950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package The PFD7 is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 combines a 60% Qg reduction over CoolMOS™ C3 (resulting in the reduction of driving losses and improved light and full load efficiency) with a fast and robust body diode.
    Producent:
    Infineon
    Rozmiar:
    1069 kB
    Stron:
    14
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    HFA3102

    Dual Long-Tailed Pair Transistor Array
    Producent:
    Renesas Electronics
    Rozmiar:
    433 kB
    Stron:
    8
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    IGC100T75H12RYA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    353 kB
    Stron:
    8
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    IGC100T75H12RDYA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    347 kB
    Stron:
    8
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    IDC52D75H8DA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    278 kB
    Stron:
    7
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    IDC52D75H8A

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    272 kB
    Stron:
    7
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    HFA3102

    Dual Long-Tailed Pair Transistor Array
    Producent:
    Intersil
    Rozmiar:
    209 kB
    Stron:
    1
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    821903-5

    Extraction Tool For PLCC Sockets-With Solder Tails
    Producent:
    TE Connectivity
    Rozmiar:
    144 kB
    Stron:
    1
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    62202-9745

    Multi-Port Connector Tool for 74737 Series Single Port Connector with Press-fit PC Tails
    Producent:
    Molex
    Rozmiar:
    29 kB
    Stron:
    2