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    MSO24 2-BW-100 + 2-MSO + 2-ULTIMATE + R3

    Oscyloskop cyfrowy Tektronix MSO24 2-BW-100 + 2-MSO + 2-ULTIMATE + R3 100 MHz 1.25 GSa/s
    Producent:
    Tektronix
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    1326 kB
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    28
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    ISC016N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    Infineon
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    1268 kB
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    ISC012N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    Infineon
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    1266 kB
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    15
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    ISC011N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting per
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    Infineon
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    1266 kB
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    15
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    ISCH99N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    Infineon
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    1266 kB
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    15
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    ISZ015N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in a PQFN 3.3 x 3.3 package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting
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    Infineon
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    1265 kB
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    13
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    ISCH54N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
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    Infineon
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    1221 kB
    Stron:
    15
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    ISCH69N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    15
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    GS66516B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
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    1143 kB
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    17
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    GS-065-060-5-T-A-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-060-5-T-A-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as on-board and off-board EV chargers, traction drive, ACDC and DCDC converters, industrial power supplies and renewable energ
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    Infineon
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    1124 kB
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    18
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    GS66516T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
    Rozmiar:
    1099 kB
    Stron:
    18
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    GS66504B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66504B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66504B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1052 kB
    Stron:
    17
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    GS66508T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
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    Infineon
    Rozmiar:
    1038 kB
    Stron:
    20
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    GS66508B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    1008 kB
    Stron:
    20
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    GS66506T-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66506T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66506T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    976 kB
    Stron:
    18
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    GS61004B-TR

    CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
    Producent:
    Infineon
    Rozmiar:
    970 kB
    Stron:
    15
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    GS66502B-TR

    CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66502B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66502B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.
    Producent:
    Infineon
    Rozmiar:
    938 kB
    Stron:
    17
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    GS61008P-TR

    CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.
    Producent:
    Infineon
    Rozmiar:
    914 kB
    Stron:
    21
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    GS-065-008-6-L-TR

    CoolGaN™ Transistor 700 V G4 for ultimate efficiency and reliability The GS-065-008-6-L is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.
    Producent:
    Infineon
    Rozmiar:
    879 kB
    Stron:
    17
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    TS32GUSDHC10U1

    Transcend Ultimate (600x) microSDHC Przemysłowy 32 GB Class 10, UHS-I zaw. kartę pamięci SD
    Producent:
    Transcend
    Rozmiar:
    827 kB
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    E301535301

    Baterie AA Energizer Ultimate FR6 E301535301, 1.5 V, litowe, 4 szt.
    Producent:
    Energizer
    Rozmiar:
    348 kB
    Stron:
    2
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    102791EPRO

    Pogłębiacz stożkowy zestaw RUKO ULTIMATECUT 102791EPRO 1 szt.
    Producent:
    RUKO
    Rozmiar:
    168 kB
    Stron:
    1