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    IKZA50N120CH7

    1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    IKZA40N120CH7

    1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    IKY50N120CH7

    1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    IKY120N120CH7

    1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 4pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers. In addition, Kelvin emitter pin brings additional reduction of total switching losses compared to 3 pin.
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    IKY100N120CH7

    1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1712 kB
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    IKY140N120CH7

    1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package Hard-switching 1200 V, 140 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1699 kB
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    IKZA75N120CH7

    1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1694 kB
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    IKQ120N120CH7

    1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package Hard-switching 1200 V, 120 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    IKY75N120CH7

    1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1660 kB
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    IKQ50N120CH7

    1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1622 kB
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    IKQ100N120CH7

    1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package Hard-switching 1200 V, 100 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1585 kB
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    IKQ75N120CH7

    1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    Infineon
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    1574 kB
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    17
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    IKQ140N120CH7

    1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package Hard-switching 1200 V, 140 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247PLUS-3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    1561 kB
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    IKW75N120CH7

    1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package Hard-switching 1200 V, 75 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
    Producent:
    Infineon
    Rozmiar:
    1491 kB
    Stron:
    17
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    IKW50N120CH7

    1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
    Producent:
    Infineon
    Rozmiar:
    1429 kB
    Stron:
    17
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    IKW40N120CH7

    1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 3pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.
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    Infineon
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    1392 kB
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    17
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    IMSQ120R053M2HH

    CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
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    Infineon
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    1359 kB
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    IMSQ120R012M2HH

    CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 12 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
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    Infineon
    Rozmiar:
    1338 kB
    Stron:
    17
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    IMSQ120R040M2HH

    CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
    Producent:
    Infineon
    Rozmiar:
    1323 kB
    Stron:
    17
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    IMSQ120R026M2HH

    CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
    Producent:
    Infineon
    Rozmiar:
    1317 kB
    Stron:
    17