elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    FF06MR12A04MA2

    The HybridPACK™ DSC CoolSiC™ G2 module is a compact B2-bridge power module (1200 V / 190 A) The power module implements the second generation CoolSiC™ Automotive MOSFET 1200 V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles
    Producent:
    Infineon
    Rozmiar:
    1958 kB
    Stron:
    16
  2. Podgląd PDFa
    Do dokumentacji »

    IPP018N10N5

    OptiMOS™ 5 power MOSFET 100 V in TO-220 The IPP018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard TO-220 package for through-hole assembly. OptiMOS™ 5 power MOSFET in TO-220 targets light electric vehicles and battery management systems .
    Producent:
    Infineon
    Rozmiar:
    1675 kB
    Stron:
    11
  3. Podgląd PDFa
    Do dokumentacji »

    IKQB200N75CP2

    750 V, 200 A Industrial discrete EDT2 IGBT with anti-parallel diode in TO-247PLUS SMD package Hard-switching 750 V, 200 A EDT2 discrete in TO-247PLUS SMD package technology has been developed to fulfill the demand in CAV applications such as delivery vehicles, trucks and bus drive inverters. The TO-247PLUS SMD package, an upgrade to the existing TO-247PLUS package , enabling package backside compatibility for reflow soldering at 245°C up to 3 times. This unique, delamination-free design delivers exceptiona
    Producent:
    Infineon
    Rozmiar:
    1621 kB
    Stron:
    17
  4. Podgląd PDFa
    Do dokumentacji »

    IKQB120N75CP2

    750 V, 120 A Industrial discrete EDT2 IGBT with anti-parallel diode in TO-247PLUS SMD package Hard-switching 750 V, 120 A EDT2 discrete in TO-247PLUS SMD package technology has been developed to fulfill the demand in CAV applications such as delivery vehicles, trucks and bus drive inverters. The TO-247PLUS SMD package, an upgrade to the existing TO-247PLUS package , enabling package backside compatibility for reflow soldering at 245°C up to 3 times. This unique, delamination-free design delivers exceptiona
    Producent:
    Infineon
    Rozmiar:
    1602 kB
    Stron:
    17
  5. Podgląd PDFa
    Do dokumentacji »

    IKQB160N75CP2

    750 V, 160 A Industrial discrete EDT2 IGBT with anti-parallel diode in TO-247PLUS SMD package Hard-switching 750 V, 160 A EDT2 discrete in TO-247PLUS SMD package technology has been developed to fulfill the demand in CAV applications such as delivery vehicles, trucks and bus drive inverters. The TO-247PLUS SMD package, an upgrade to the existing TO-247PLUS package , enabling package backside compatibility for reflow soldering at 245°C up to 3 times. This unique, delamination-free design delivers exceptiona
    Producent:
    Infineon
    Rozmiar:
    1592 kB
    Stron:
    17
  6. Podgląd PDFa
    Do dokumentacji »

    IPT014N10N5

    OptiMOS™ 5 power MOSFET 100 V in TOLL The IPT014N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.4 mOhm, 100 V in a TO-Leadless (TOLL) package with a high current capability of 362 A (ID @25˚C). OptiMOS™ 5 power MOSFET in TOLL targets power tools , light electric vehicles and battery management systems .
    Producent:
    Infineon
    Rozmiar:
    1576 kB
    Stron:
    11
  7. Podgląd PDFa
    Do dokumentacji »

    KP467

    XENSIV™ - KP467 first autonomous air pressure sensor to permanently monitor and detect thermal runaway events in battery electric vehicles A modern battery electric vehicle is constantly monitored by a large number of sensors and intelligent microcontrollers while driving. In parking mode, these battery functions are disabled. KP467 is the first pressure sensor for battery management systems that monitors and provides a warning in case of a thermal runaway event with highest efficiently, immediate response
    Producent:
    Infineon
    Rozmiar:
    1482 kB
    Stron:
    48
  8. Podgląd PDFa
    Do dokumentacji »

    FS03MR12A7MA2B

    HybridPACK™ Drive G2 CoolSiC™: Compact 1200V/310A B6-bridge power module optimized for inverter various power classes The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles.
    Producent:
    Infineon
    Rozmiar:
    1426 kB
    Stron:
    19
  9. Podgląd PDFa
    Do dokumentacji »

    FS520R12A8P1LB

    This HybridPACK™ Drive G2 module is a very compact six-pack power module (1200V/520A) with enhanced package optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
    Producent:
    Infineon
    Rozmiar:
    1331 kB
    Stron:
    19
  10. Podgląd PDFa
    Do dokumentacji »

    FS410R12A7P1B

    The HybridPACK™ Drive is a very compact six-pack module (1200V/410A) optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation IGBT chip technology 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
    Producent:
    Infineon
    Rozmiar:
    1282 kB
    Stron:
    19
  11. Podgląd PDFa
    Do dokumentacji »

    IQD063N15NM5

    OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQD063N15NM5 comes in a PQFN 5x6 Source-Down package. It's industry’s lowest RDS(on) of 6.3 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like SMPS, telecom power, server, solar, battery-powered applications, medium voltage drives, drones, robotics, light electric vehicles, and
    Producent:
    Infineon
    Rozmiar:
    1238 kB
    Stron:
    11
  12. Podgląd PDFa
    Do dokumentacji »

    TLE9012DQU

    Li-Ion battery monitoring and balancing IC The TLE9012DQU is a versatile battery monitoring and balancing IC for automotive, industrial, and consumer applications. It supports Li-Ion battery packs in electric vehicles (MHEV, HEV, PHEV, BEV), energy storage systems, e-bike BMS, and home energy storage. With cell voltage and temperature measurement, cell balancing, isolated communication, and comprehensive diagnostics, TLE9012DQU ensures safe and efficient battery operation.
    Producent:
    Infineon
    Rozmiar:
    1207 kB
    Stron:
    72
  13. Podgląd PDFa
    Do dokumentacji »

    TLE49SRS8

    XENSIV™ - TLE49SRS8 magnetic angle sensor with outstanding stray field robustness provides high accuracy with flexibly package and interface options The electrification of cars with internal combustion engines and the introduction of electric main drives for electric vehicles continuously increase the potential of electro-magnetic interference by a so-called stray field which can cause issues for electronic sub systems. Differential Hall cells enable a stray field robust measurement of a magnetic field. Si
    Producent:
    Infineon
    Rozmiar:
    1201 kB
    Stron:
    40
  14. Podgląd PDFa
    Do dokumentacji »

    IPT039N15N5

    OptiMOS™ 5 power MOSFET 150 V 3.9 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    1156 kB
    Stron:
    13
  15. Podgląd PDFa
    Do dokumentacji »

    IPB018N10N5

    OptiMOS™ 5 power MOSFET 100 V in D²PAK The IPB018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard D²PAK package for surface mount assembly. OptiMOS™ 5 power MOSFET in D²PAK targets light electric vehicles and battery management systems .
    Producent:
    Infineon
    Rozmiar:
    1145 kB
    Stron:
    11
  16. Podgląd PDFa
    Do dokumentacji »

    IPF015N10N5

    OptiMOS™ 5 power MOSFET 100 V in D²PAK 7-pin The IPF015N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.5 mOhm, 100 V in the industry standard D²PAK 7-pin package. OptiMOS™ 5 power MOSFET in D²PAK 7-pin targets light electric vehicles and battery management systems .
    Producent:
    Infineon
    Rozmiar:
    1093 kB
    Stron:
    11
  17. Podgląd PDFa
    Do dokumentacji »

    FS1000R08A7P3B

    The HybridPACK™ Drive is a very compact six-pack module (750V/1000A) optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation chip technology EDT3 750V, optimized for electric drive train applications, from mid- to high-range automotive power classes.
    Producent:
    Infineon
    Rozmiar:
    1004 kB
    Stron:
    19
  18. Podgląd PDFa
    Do dokumentacji »

    IPT044N15N5

    OptiMOS™ 5 power MOSFET 150 V 4.4 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    1001 kB
    Stron:
    11
  19. Podgląd PDFa
    Do dokumentacji »

    IPT063N15N5

    OptiMOS™ 5 power MOSFET 150 V 6.3 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    994 kB
    Stron:
    11
  20. Podgląd PDFa
    Do dokumentacji »

    FS1150R08A8P3C

    This HybridPACK™ Drive G2 module is a very compact six-pack power module with enhanced package optimized for hybrid and electric vehicles This HybridPACK™ Drive G2 module is a very compact six-pack power module with enhanced package optimized for hybrid and electric vehicles
    Producent:
    Infineon
    Rozmiar:
    920 kB
    Stron:
    19
  21. Podgląd PDFa
    Do dokumentacji »

    IPT009N06NM5

    OptiMOS™ 5 N-channel power MOSFET 60 V 0.9 mΩ in TOLL package Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), point-of-load (POL) and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
    Producent:
    Infineon
    Rozmiar:
    880 kB
    Stron:
    11
  22. Podgląd PDFa
    Do dokumentacji »

    IGC100T75H12RYA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    353 kB
    Stron:
    8
  23. Podgląd PDFa
    Do dokumentacji »

    IGC100T75H12RDYA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    347 kB
    Stron:
    8
  24. Podgląd PDFa
    Do dokumentacji »

    IDC52D75H8DA

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    278 kB
    Stron:
    7
  25. Podgląd PDFa
    Do dokumentacji »

    IDC52D75H8A

    Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
    Producent:
    Infineon
    Rozmiar:
    272 kB
    Stron:
    7