FDN357N MOSFET, N-Ch 30V 1.9A 0.06R, SOT-23

Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features - 1.9 A, 30 V - RDS(ON) = 0.090 W @ VGS = 4.5 V - RDS(ON) = 0.060 W @ VGS = 10 V - Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities - High density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability