IRL510PBF MOSFET, N-Ch 100V 5.6A 0.54R, TO-220

IRL510, SiHL510 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features - Dynamic dV/dt Rating - Repetitive Avalanche Rated - Logic-Level Gate Drive - RDS(on) Specified at VGS = 4 V and 5 V - 175 °C Operating Temperature - Fast Switching - Ease of Paralleling - Compliant to RoHS Directive 2002/95/EC