TSAL6100 infrared diode, GaAlAs/GaAs, 940 nm, 20°, 5 mm, T-1 3/4

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Descriptions TSAL6100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

Features - Package type: leaded - Package form: T-1¾ - Dimensions (in mm): Ø 5 - Peak wavelength: ?p = 940 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ? = ± 10° - Low forward voltage - Suitable for high pulse current operation - Good spectral matching with Si photodetectors

Applications - Infrared remote control units with high power reqirements - Free air transmission systems - Infrared source for optical counters and card readers - IR source for smoke detectors