STPSC12065G2Y-TR Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC12065G2Y-TR
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +9% (07.07.2025)
- Poprzednia cena:
- 4.42 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 3.21 | 2.28 | 2.16 |
Sugerowane produkty dla stpsc12065
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics