>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier

TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels.

The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

Applications

* Extended battery operation for public mobile radios

* Power amplifier stage for wireless infrastructure

* Test and measurement equipment

* Commercial and military radars

* General-purpose transmitter amplification

* High small signal gain: 34.5 dB typical

* High output power: 42 dBm typical at PIN = 18 dBm

* High PAE: 55% typical at PIN = 18 dBm

* Frequency range: 2.7 GHz to 3.8 GHz

* Supply voltage: VDD = 28 V at a quiescent current of 150 mA

* 5 mm × 5 mm, 32-lead LFCSPCAV package