0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.

The HMC8205BF10 is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.

The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).

The HMC8205BCHIPS is a gallium nitride (GaN), broadband power amplifier that delivers 45.5 dBm (35 W) with 40% power added efficiency (PAE) across an instantaneous bandwidth of 0.4 GHz to 6 GHz. No external matching is required to achieve full band operation. No external inductor is required to bias the amplifier. In addition, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BCHIPS.

The HMC8205BCHIPS is ideal for pulsed or continuous wave (CW) applications, such as military jammers, wireless infrastructure, radar, and general-purpose amplification.

APPLICATIONS

* Military jammers

* Commercial and military radar

* Power amplifier stage for wireless infrastructure

* Test and measurement equipment

* High PSAT: 46 dBm

* High power gain: 20 dB

* High PAE: 38%

* Instantaneous bandwidth: 0.3 GHz to 6 GHz

* Supply voltage: VDD = 50 V at 1300 mA

* 10-lead LDCC package