50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from 50 GHz to 95 GHz. In the lower band of 50 GHz to 70 GHz, the ADPA7001CHIPS provides 14.5 dB (typical) of gain, 25.5 dBm output third-order intercept (OIP3), and 17 dBm of output power for 1 dB gain compression. In the upper band of 70 GHz to 90 GHz, the ADPA7001CHIPS provides 14 dB (typical) of gain, 25 dBm output IP3, and 17.5 dBm of output power for 1 dB gain compression. The ADPA7001CHIPS requires 350 mA from a 3.5 V supply. The ADPA7001CHIPS amplifier inputs/outputs are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.

Applications

* Test instrumentation

* Military and space

* Telecommunications infrastructure

* Gain: 14.5 dB typical at 50 GHz to 70 GHz

* S11: 22 dB typical at 50 GHz to 70 GHz

* S22: 19 dB typical at 50 GHz to 70 GHz

* P1dB: 17 dBm typical at 50 GHz to 70 GHz

* PSAT: 21 dBm typical