2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.

The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

APPLICATIONS

* Test instrumentation

* Microwave radios and very small aperture terminals (VSATs)

* Military and space

* Telecommunications infrastructure

* Fiber optics

* Output power for 1 dB compression (P1dB): 21.5 dBm typical

* Saturated output power (PSAT): 22 dBm typical

* Gain: 13.5 dB typical

* Noise figure: 2 dB