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STGSB200M65DF2AG Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package

STMicroelectronics

RSS 20.13 20.13 USD81.78 PLN
  • Sklep zagraniczny
MPN:
STGSB200M65DF2AG
Producent:
STMicroelectronics
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+3.34% (25.08.2025)
Poprzednia cena:
19.48 USD
Ilość [ x szt]: 10+ 100+
Cena USD [za szt]: 15.05 12.04

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.

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