STGSB200M65DF2AG Automotive-grade trench gate field-stop, 650 V, 200 A low-loss M series IGBT in an ACEPACK SMIT package
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STGSB200M65DF2AG
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +3.34% (25.08.2025)
- Poprzednia cena:
- 19.48 USD
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 15.05 | 12.04 |
Sugerowane produkty dla stgsb200m65df2ag
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Thanks to the DBC substrate, the ACEPACK SMIT surface mounting power package offers a low thermal resistance coupled with a electrical isolated top side thermal pad.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics