2 GHz to 28 GHz, GaAs, pHEMT, MMIC Low Noise Amplifier

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.

The ADL9006 amplifier input and output are internally matched to 50 Ω.

ADL9006CHIPS The ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA.

The ADL9006CHIPS amplifier input and output are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).

APPLICATIONS

* Test instrumentation

* Military and space

* Local oscillator driver amp

ADL9006CHIPS

* Test instrumentation

* Microwave radios and very small aperture terminals (VSATs)

* Military and space

* P1dB: 20 dBm typical at 2 GHz to 6 GHz

* PSAT: 20.5 dBm typical at 2 GHz to 6 GHz

* Gain: 15.5 dB typical at 6 GHz to 28 GHz

* Noise figure: 2.5 dB typical at 2 GHz to 20 GHz

* OIP3: 26 dBm typical at 2 GHz to 6 GHz

* Supply voltage: 5 V at 53 mA

* 50 Ω matched input and output