Aerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 28 GHz

The ADL9006S is a gallium arsenide (GaAs), pseudomorphic high electron

mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC),

low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier

provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order

intercept (OIP3), and 20 dBm of output power for 1 dB compression (OP1dB)

while requiring 53 mA from a 5 V supply. The ADL9006S is self-biased with only

a single positive supply needed to achieve a supply current (IDD) of 53 mA.

The ADL9006S amplifier input and output are internally matched to 50 Ω.

Applications

* Local Oscillator Driver Amp

* Signals Intelligence

* Military & Space

* OP1dB: +20 dBm Typical from 2 GHz to 6 GHz

* PSAT: +20.5 dBm Typical from 2 GHz to 6 GHz

* Gain: 15.5 dB Typical from 6 GHz to 28 GHz

* Noise Figure: 2.5 dB Typical from 2 GHz to 20 GHz

* OIP3: +26 dBm Typical from 2 GHz to 6 GHz