1 Watt Power Amplifier SMT, 2.3 - 2.8 GHz

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components.

Applications

* Cellular/3G & LTE/4G

* WiMAX, WiBro & Fixed Wireless

* Military & SATCOM

* Test Equipment

* High Gain: 31 dB

* High PAE: 28% @ +33 dBm Pout

* Low EVM: 2.5% @ Pout = +25 dBm with 54 Mbps OFDM Signal