IGP30N65F5XKSA1 IGBT transistor, N-channel, 650 V, 55 A, 188 W, TO-220

IGP30N65F5 650V FAST IGBT high speed switching series fifth generation in TRENCHSTOP™ 5 technology

Features and Benefits: High speed F5 technology offering - Best-in-Class efficiency in hard switching and resonant topologies - Plug and play replacement of previous generation IGBTs - 650V breakdown voltage - Low gate charge QG - Ideal fit with SIC Schottky Diode in boost converters - Maximum junction temperature 175°C - Qualified according to JEDEC for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications: - Solar converters - Uninterruptible power supplies - Welding converters - Mid to high range switching frequency converters