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STPSC6H065D SiC Schottky diode, 650V, 6A, TO220AC

reichelt elektronik

STPSC6H065D SiC Schottky diode, 650V, 6A, TO220AC RSS 2.06 2.06 EUR8.79 PLN
  • Sklep zagraniczny
MPN:
STPSC6H065D
Kod:
270340
Producent:
STMicroelectronics
Obudowa:
TO-220AC
GTIN-13:
9900002703408
Waluta:
euro
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-23% (31.07.2024)
Poprzednia cena:
2.69 EUR

This 6 A, 650 V SiC diode is an ultra high performance Schottky diode. It is manufactured from a silicon carbide substrate. The wide-band gap material allows a rated voltage of 650 V. Due to the Schottky construction, there is no recovery at the junction. The minimum capacitive switch-off behaviour is independent of temperature.

This STPSC6H065 is especially designed for use in PFC applications suitable. This ST-SiC diode increases the performance under hard switching conditions. Its high surge current capability ensures good robustness in transient phases.

Features

- no recovery charge in the operating area - positive temperature coefficient - high surge current capability - Insulated housing TO-220AC Insulated:

- Isolated voltage: 2500 VRMS

- Typical housing capacitance: 7 pF

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