IKW50N65F5FKSA1 IGBT transistor, N-channel, 650 V, 80 A, 305 W, TO-247-3

IKW50N65F5 650V High speed 5 FAST IGBT and Diode : IGBT in TRENCHSTOP™ 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits: - High speed F5 TRENCHSTOP™ technology offering - Best-in-Class efficiency in hard switching and resonant topologies - 650V breakdown voltage - Low gate charge QG - IGBT copacked with RAPID 1 fast and soft antiparallel diode - maximum junction temperature 175°C - qualified according to JEDEC for target applications - Pb-free lead plating, halogen-free mould compound, RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications: - Solar converters - uninterruptible power supplies - welding converters - Mid to high range switching frequency converters