AT45DB041E-SSHN NOR flash memory 4Mb, 1.65V, serial, SPI, 85MHz, SO-8

Flash memory, Serial-NOR, 4 Mbit, SPI, SO-8 0.150", 85Mhz, 2048 pages x 264 byte

Characteristics:

- Supply voltage 1.65V - 3.6V

- Serial peripheral interface (SPI) compatible - Supports SPI modes 0 and 3 - Supports the operation of RapidS™

- Continuous read capability across the entire array - Up to 85MHz - Low-power read option up to 15MHz - Clock-to-Output time (tV) of maximum 6ns

- User-definable page size - 256 bytes per page - 264 bytes per page (default) - The page size can be preconfigured at the factory for 256 bytes.

- 2 independent SRAM data buffers (256/264 bytes) - Allows data to be received during reprogramming of the main memory device

- Flexible programming - Byte/page program (1 to 256/264 bytes) directly into the main memory - buffer writing - Buffering to main memory page program

- Flexible deletion options - Page deletion (256/264 bytes) - Delete block (2KB) - Delete sector (64KB) - Chip deletion (4-Mbit/s)

- Suspend / Resume programming and deleting

- Advanced hardware and software data protection features - Individual sector protection - Individual sector block to make each sector permanently write-protected.

- 128-byte OTP security register (One-Time Programmable) - 64 bytes factory-programmed with a unique identifier - 64 bytes user-defined programmable

- Hardware and software controlled reset options

- JEDEC Standard Manufacturer and Device ID

- Low power dissipation - 400nA Ultra-Deep Power-Down Current (typical) - 3µA Deep Power-Down Current (typical) - 25µA Standby current (typical) - 7mA Active reading current (typical)

- Lifetime: 100,000 program/erase cycles per page

- Data retention: 20 years

- Corresponds to the entire industrial temperature range

- Green (Pb/Halide-Free/RoHS compliant) Housing design - 8-pin SOIC (0.150" and 0.208" wide) - 8-pin ultra-thin DFN (5 x 6 x 0.6 mm)