UJ3D06504TS SiC Schottky diode 650V, MPS, 4A, Gen-III, TO-220-2L

Gen-III | 4A - 650V SiC Schottky Diode

Description: United Silicon Carbide, Inc. offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175°C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Features: - 175°C maximum operating junction temperature - Easy paralleling - Extremely fast switching not dependent on temperature - No reverse or forward recovery - Enhanced surge current capability, MPS structure - Excellent thermal performance, Ag sintered - 100% UIS tested - AEC-Q101 qualified

Typical Applications: - Power converters - Industrial motor drives - Switching-mode power supplies - Power factor correction modules

Delivery in complete industrial packaging (Tube of 50 pieces) possible, please contact our quotation department!